Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Abstract

Pixel sensors built on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq/cm2 and detection efficiencies above 99.5%. Currently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [1];  [4];  [1];  [5];  [1];  [1];  [3];  [6];  [7];  [8];  [7];  [4];  [4];  [4] more »;  [1];  [1];  [9];  [7];  [4];  [1];  [3];  [1];  [4];  [10] « less
+ Show Author Affiliations
  1. Univ. of Geneva (Switzerland)
  2. Inst. for High Energy Physics (IFAE), Barcelona (Spain)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Karlsruhe Inst. of Technology (KIT) (Germany)
  5. Univ. of Oklahoma, Norman, OK (United States)
  6. Brookhaven National Lab. (BNL), Upton, NY (United States); Univ. of Science and Technology of China, Hefei (China)
  7. Univ. of Bern (Switzerland)
  8. Argonne National Lab. (ANL), Lemont, IL (United States)
  9. Univ. of Liverpool (United Kingdom)
  10. Univ. of Illinois, Urbana-Champaign, IL (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP); Swiss National Science Foundation (SNSF)
OSTI Identifier:
1526684
Report Number(s):
BNL-211728-2019-JAAM
Journal ID: ISSN 0168-9002
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 924; Journal Issue: C; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ATLAS ITk upgrade; High luminosity LHC; Silicon pixel sensor; Monolithic active pixel sensor; CMOS; HV-MAPS

Citation Formats

Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, and Zhang, Matt. Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade. United States: N. p., 2018. Web. doi:10.1016/j.nima.2018.07.061.
Copy to clipboard
Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, & Zhang, Matt. Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade. United States. https://doi.org/10.1016/j.nima.2018.07.061
Copy to clipboard
Kiehn, Moritz, Di Bello, Francesco Armando, Benoit, Mathieu, Casanova Mohr, Raimon, Chen, Hucheng, Chen, Kai, D.M.S., Sultan, Ehrler, Felix, Ferrere, Didier, Frizell, Dylan, Gonzalez Sevilla, Sergio, Iacobucci, Giuseppe, Lanni, Francesco, Liu, Hongbin, Merlassino, Claudia, Metcalfe, Jessica, Miucci, Antonio, Peric, Ivan, Prathapan, Mridula, Schimassek, Rudolf, Vicente Barreto, Mateus, Weston, Thomas, Vilella Figueras, Eva, Weber, Michele, Weber, Alena, Wong, Winnie, Wu, Weihao, Zaffaroni, Ettore, Zhang, Hui, and Zhang, Matt. Sat . "Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade". United States. https://doi.org/10.1016/j.nima.2018.07.061. https://www.osti.gov/servlets/purl/1526684.
Copy to clipboard
@article{osti_1526684,
title = {Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade},
author = {Kiehn, Moritz and Di Bello, Francesco Armando and Benoit, Mathieu and Casanova Mohr, Raimon and Chen, Hucheng and Chen, Kai and D.M.S., Sultan and Ehrler, Felix and Ferrere, Didier and Frizell, Dylan and Gonzalez Sevilla, Sergio and Iacobucci, Giuseppe and Lanni, Francesco and Liu, Hongbin and Merlassino, Claudia and Metcalfe, Jessica and Miucci, Antonio and Peric, Ivan and Prathapan, Mridula and Schimassek, Rudolf and Vicente Barreto, Mateus and Weston, Thomas and Vilella Figueras, Eva and Weber, Michele and Weber, Alena and Wong, Winnie and Wu, Weihao and Zaffaroni, Ettore and Zhang, Hui and Zhang, Matt},
abstractNote = {Pixel sensors built on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq/cm2 and detection efficiencies above 99.5%. Currently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.},
doi = {10.1016/j.nima.2018.07.061},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 924,
place = {United States},
year = {Sat Jul 21 00:00:00 EDT 2018},
month = {Sat Jul 21 00:00:00 EDT 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.nima.2018.07.061
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Figures / Tables:

Figure 1 Figure 1: Cross-section of the pixel implants for the H35DEMO prototype along the large 250 µm pitch direction. Three separate sensor diodes (deep n-well labeled as dntub) are connected together to reduce the total sensor capacitance while maintaining a homogeneous depletion. The additional deep p-type implant (labeled as dptub) underneathmore » the nMOS components is optional and only present in some parts of the test matrices.« less
All figures and tables (7 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
journal, February 2018

The MuPix high voltage monolithic active pixel sensor for the Mu3e experiment
journal, March 2015

The MuPix system-on-chip for the Mu3e experiment
journal, February 2017

  • Augustin, Heiko; Berger, Niklaus; Dittmeier, Sebastian
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 845
  • DOI: 10.1016/j.nima.2016.06.095

Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade
journal, January 2016

Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
journal, January 2017

Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
journal, June 2017

The FE-I4 telescope for particle tracking in testbeam experiments
journal, July 2016

    Sort by:
    [ × clear filter / sort ]

    Figures / Tables found in this record:

    Figure 1 (p. 4)figure
    Figure 2 (p. 4)figure
    Figure 3 (p. 5)figure
    Figure 4 (p. 5)figure
    Figure 5 (p. 6)figure
    Figure 6 (p. 7)figure
    Figure 7 (p. 7)figure
      [ × clear filter / sort ]
      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

      Similar Records in DOE PAGES and OSTI.GOV collections: