Title: Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5017251 · OSTI ID:1469552
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4];  [5]
  1. Sejong Univ., Seoul (South Korea)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Pohang University of Science and Technology (POSTECH) (South Korea)
  4. Sejong Univ., Seoul (South Korea); Hokkaido University, Sapporo (Japan)
  5. Hokkaido University, Sapporo (Japan)
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In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

Research Organization:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
89233218CNA000001; AC52-06NA25396
OSTI ID:
1469552
Report Number(s):
LA-UR-18-22597; LA-UR-18-29544
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 112; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Remote homoepitaxy of ZnO microrods across graphene layers journal January 2018
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