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Title: Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [3] ; ORCiD logo [4] ;  [5]
  1. Sejong Univ., Seoul (South Korea)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Pohang University of Science and Technology (POSTECH) (South Korea)
  4. Sejong Univ., Seoul (South Korea); Hokkaido University, Sapporo (Japan)
  5. Hokkaido University, Sapporo (Japan)
Publication Date:
Report Number(s):
LA-UR-18-22597; LA-UR-18-29544
Journal ID: ISSN 0003-6951
Grant/Contract Number:
AC52-06NA25396; 89233218CNA000001
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science
OSTI Identifier:
1469552
Alternate Identifier(s):
OSTI ID: 1494482

Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, and Fukui, Takashi. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene. United States: N. p., Web. doi:10.1063/1.5017251.
Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, & Fukui, Takashi. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene. United States. doi:10.1063/1.5017251.
Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, and Fukui, Takashi. 2018. "Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene". United States. doi:10.1063/1.5017251. https://www.osti.gov/servlets/purl/1469552.
@article{osti_1469552,
title = {Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene},
author = {Choi, Ji Eun and Yoo, Jinkyoung and Lee, Donghwa and Hong, Young Joon and Fukui, Takashi},
abstractNote = {In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.},
doi = {10.1063/1.5017251},
journal = {Applied Physics Letters},
number = 14,
volume = 112,
place = {United States},
year = {2018},
month = {4}
}