Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene
- Sejong Univ., Seoul (South Korea)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Pohang University of Science and Technology (POSTECH) (South Korea)
- Sejong Univ., Seoul (South Korea); Hokkaido University, Sapporo (Japan)
- Hokkaido University, Sapporo (Japan)
In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC52-06NA25396; 89233218CNA000001
- OSTI ID:
- 1469552
- Alternate ID(s):
- OSTI ID: 1494482
- Report Number(s):
- LA-UR-18-22597; LA-UR-18-29544
- Journal Information:
- Applied Physics Letters, Vol. 112, Issue 14; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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