Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

doi:10.1063/1.5017251

Title: Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Journal Article · 02 April 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5017251 · OSTI ID:1469552

^[1];

^[2];

^[3];

^[4]; Fukui, Takashi ^[5]

Sejong Univ., Seoul (South Korea)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Pohang University of Science and Technology (POSTECH) (South Korea)
Sejong Univ., Seoul (South Korea); Hokkaido University, Sapporo (Japan)
Hokkaido University, Sapporo (Japan)

In this study, we demonstrate the crystal-phase intergradation of InAs nanostructures grown on graphene via van der Waals epitaxy. InAs nanostructures with diverse diameters are yielded on graphene. High-resolution transmission electron microscopy (HR-TEM) reveals two crystallographic features of (i) wurtzite (WZ)-to-zinc blende (ZB) intergradation along the growth direction of InAs nanostructures and (ii) an increased mean fraction of ZB according to diameter increment. Based on the HR-TEM observations, a crystal-phase intergradation diagram is depicted. We discuss how the formation of a WZ-rich phase during the initial growth stage is an effective way of releasing heterointerfacial stress endowed by the lattice mismatch of InAs/graphene for energy minimization in terms of less in-plane lattice mismatching between WZ-InAs and graphene. Lastly, the WZ-to-ZB evolution is responsible for the attenuation of the bottom-to-top surface charge interaction as growth proceeds.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC52-06NA25396; 89233218CNA000001

OSTI ID:: 1469552

Alternate ID(s):: OSTI ID: 1494482

Report Number(s):: LA-UR-18-22597; LA-UR-18-29544

Journal Information:: Applied Physics Letters, Vol. 112, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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