Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
Abstract
Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are 'half van der Waals' metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.
- Authors:
-
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- Pennsylvania State Univ., University Park, PA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS) and The Molecular Foundry (TMF)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Northrop Grumman Mission Systems’ University Research Program; Semiconductor Research Corporation Intel/Global Research Collaboration Fellowship Program; National Science Foundation (NSF); China Scholarship Council (CSC); Alfred P. Sloan Research Fellowship
- OSTI Identifier:
- 1615216
- Alternate Identifier(s):
- OSTI ID: 1777956
- Grant/Contract Number:
- AC05-00OR22725; 1453924; 1847811; NSF DMR-1708972; NSF DMR-1808900; DMR-1539916; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Materials
- Additional Journal Information:
- Journal Volume: 19; Journal Issue: 6; Journal ID: ISSN 1476-1122
- Publisher:
- Springer Nature - Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Superconducting properties and materials; Two-dimensional materials
Citation Formats
Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, and Robinson, Joshua A. Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy. United States: N. p., 2020.
Web. doi:10.1038/s41563-020-0631-x.
Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, & Robinson, Joshua A. Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy. United States. https://doi.org/10.1038/s41563-020-0631-x
Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, and Robinson, Joshua A. Tue .
"Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy". United States. https://doi.org/10.1038/s41563-020-0631-x. https://www.osti.gov/servlets/purl/1615216.
@article{osti_1615216,
title = {Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy},
author = {Briggs, Natalie and Bersch, Brian and Wang, Yuanxi and Jiang, Jue and Koch, Roland J. and Nayir, Nadire and Wang, Ke and Kolmer, Marek and Ko, Wonhee and De La Fuente Duran, Ana and Subramanian, Shruti and Dong, Chengye and Shallenberger, Jeffrey and Fu, Mingming and Zou, Qiang and Chuang, Ya-Wen and Gai, Zheng and Li, An-Ping and Bostwick, Aaron and Jozwiak, Chris and Chang, Cui-Zu and Rotenberg, Eli and Zhu, Jun and van Duin, Adri C. T. and Crespi, Vincent and Robinson, Joshua A.},
abstractNote = {Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are 'half van der Waals' metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.},
doi = {10.1038/s41563-020-0631-x},
journal = {Nature Materials},
number = 6,
volume = 19,
place = {United States},
year = {Tue Mar 10 00:00:00 EDT 2020},
month = {Tue Mar 10 00:00:00 EDT 2020}
}
Web of Science
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- Wang, Jing; Lian, Biao; Zhang, Haijun
- Physical Review Letters, Vol. 111, Issue 8
Orbital Engineering in Symmetry-Breaking Polar Heterostructures
journal, January 2015
- Disa, Ankit S.; Kumah, Divine P.; Malashevich, Andrei
- Physical Review Letters, Vol. 114, Issue 2
Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets
journal, December 2016
- Sivadas, Nikhil; Okamoto, Satoshi; Xiao, Di
- Physical Review Letters, Vol. 117, Issue 26
Strongly Correlated Materials from a Numerical Renormalization Group Perspective: How the Fermi-Liquid State of Emerges
journal, January 2020
- Kugler, Fabian B.; Zingl, Manuel; Strand, Hugo U. R.
- Physical Review Letters, Vol. 124, Issue 1
Entropic elasticity and negative thermal expansion in a simple cubic crystal
journal, November 2019
- Wendt, David; Bozin, Emil; Neuefeind, Joerg
- Science Advances, Vol. 5, Issue 11
Octet-Line Node Structure of Superconducting Order Parameter in KFe2As2
journal, September 2012
- Okazaki, K.; Ota, Y.; Kotani, Y.
- Science, Vol. 337, Issue 6100