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Title: Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy

Abstract

Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. In this paper we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [1]; ORCiD logo [2];  [1];  [1]; ORCiD logo [3]; ORCiD logo [3];  [1];  [1];  [1];  [1];  [3]; ORCiD logo [3];  [1]; ORCiD logo [3]; ORCiD logo [3];  [4]; ORCiD logo [4] more »; ORCiD logo [1]; ORCiD logo [4];  [1];  [1];  [1]; ORCiD logo [1] « less
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS) and The Molecular Foundry (TMF)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Northrop Grumman Mission Systems’ University Research Program; Semiconductor Research Corporation Intel/Global Research Collaboration Fellowship Program; National Science Foundation (NSF); China Scholarship Council (CSC); Alfred P. Sloan Research Fellowship
OSTI Identifier:
1615216
Alternate Identifier(s):
OSTI ID: 1777956
Grant/Contract Number:  
AC05-00OR22725; 1453924; 1847811; NSF DMR-1708972; NSF DMR-1808900; DMR-1539916; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 19; Journal Issue: 6; Journal ID: ISSN 1476-1122
Publisher:
Springer Nature - Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Superconducting properties and materials; Two-dimensional materials

Citation Formats

Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, and Robinson, Joshua A. Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy. United States: N. p., 2020. Web. doi:10.1038/s41563-020-0631-x.
Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, & Robinson, Joshua A. Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy. United States. doi:https://doi.org/10.1038/s41563-020-0631-x
Briggs, Natalie, Bersch, Brian, Wang, Yuanxi, Jiang, Jue, Koch, Roland J., Nayir, Nadire, Wang, Ke, Kolmer, Marek, Ko, Wonhee, De La Fuente Duran, Ana, Subramanian, Shruti, Dong, Chengye, Shallenberger, Jeffrey, Fu, Mingming, Zou, Qiang, Chuang, Ya-Wen, Gai, Zheng, Li, An-Ping, Bostwick, Aaron, Jozwiak, Chris, Chang, Cui-Zu, Rotenberg, Eli, Zhu, Jun, van Duin, Adri C. T., Crespi, Vincent, and Robinson, Joshua A. Tue . "Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy". United States. doi:https://doi.org/10.1038/s41563-020-0631-x. https://www.osti.gov/servlets/purl/1615216.
@article{osti_1615216,
title = {Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy},
author = {Briggs, Natalie and Bersch, Brian and Wang, Yuanxi and Jiang, Jue and Koch, Roland J. and Nayir, Nadire and Wang, Ke and Kolmer, Marek and Ko, Wonhee and De La Fuente Duran, Ana and Subramanian, Shruti and Dong, Chengye and Shallenberger, Jeffrey and Fu, Mingming and Zou, Qiang and Chuang, Ya-Wen and Gai, Zheng and Li, An-Ping and Bostwick, Aaron and Jozwiak, Chris and Chang, Cui-Zu and Rotenberg, Eli and Zhu, Jun and van Duin, Adri C. T. and Crespi, Vincent and Robinson, Joshua A.},
abstractNote = {Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. In this paper we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.},
doi = {10.1038/s41563-020-0631-x},
journal = {Nature Materials},
number = 6,
volume = 19,
place = {United States},
year = {2020},
month = {3}
}

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