Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Choi, Ji Eun; Yoo, Jinkyoung; Lee, Donghwa; Hong, Young Joon; Fukui, Takashi

doi:10.1063/1.5017251

Title: Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Authors:

^[1];

^[2];

^[3];

^[4]; Fukui, Takashi ^[5]

Sejong Univ., Seoul (South Korea)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Pohang University of Science and Technology (POSTECH) (South Korea)
Sejong Univ., Seoul (South Korea); Hokkaido University, Sapporo (Japan)
Hokkaido University, Sapporo (Japan)

Publication Date:: Mon Apr 02 00:00:00 EDT 2018

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1469552

Alternate Identifier(s):: OSTI ID: 1494482

Report Number(s):: LA-UR-18-22597; LA-UR-18-29544
Journal ID: ISSN 0003-6951

Grant/Contract Number:: AC52-06NA25396; 89233218CNA000001

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 112; Journal Issue: 14; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Material Science

Citation Formats


                    Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, and Fukui, Takashi. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5017251.

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                    Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, & Fukui, Takashi. Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene.  United States.  https://doi.org/10.1063/1.5017251

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                    Choi, Ji Eun, Yoo, Jinkyoung, Lee, Donghwa, Hong, Young Joon, and Fukui, Takashi. Mon .  
"Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene".  United States.  https://doi.org/10.1063/1.5017251.  https://www.osti.gov/servlets/purl/1469552.

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@article{osti_1469552,

  title        = {Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene},

  author       = {Choi, Ji Eun and Yoo, Jinkyoung and Lee, Donghwa and Hong, Young Joon and Fukui, Takashi},

  abstractNote = {},

  doi          = {10.1063/1.5017251},

  journal      = {Applied Physics Letters},

  number       = 14,

  volume       = 112,

  place        = {United States},

  year         = {Mon Apr 02 00:00:00 EDT 2018},

  month        = {Mon Apr 02 00:00:00 EDT 2018}

}

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Works referenced in this record:

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
journal, June 2011

Thelander, Claes; Caroff, Philippe; Plissard, Sébastien
Nano Letters, Vol. 11, Issue 6
DOI: 10.1021/nl2008339

Control of InAs Nanowire Growth Directions on Si
journal, October 2008

Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh
Nano Letters, Vol. 8, Issue 10
DOI: 10.1021/nl802398j

Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
journal, September 2013

Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung
Advanced Materials, Vol. 25, Issue 47
DOI: 10.1002/adma.201302312

Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
journal, August 2014

Gao, Qian; Saxena, Dhruv; Wang, Fan
Nano Letters, Vol. 14, Issue 9
DOI: 10.1021/nl5021409

Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy
journal, March 2014

Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
Advanced Materials, Vol. 26, Issue 22
DOI: 10.1002/adma.201305909

Crystal Phase Quantum Well Emission with Digital Control
journal, September 2017

Assali, S.; Lähnemann, J.; Vu, T. T. T.
Nano Letters, Vol. 17, Issue 10
DOI: 10.1021/acs.nanolett.7b02489

The Role of Surface Energies and Chemical Potential during Nanowire Growth
journal, March 2011

Algra, Rienk E.; Verheijen, Marcel A.; Feiner, Lou-Fé
Nano Letters, Vol. 11, Issue 3
DOI: 10.1021/nl104267p

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires
journal, December 2015

Potts, Heidi; Friedl, Martin; Amaduzzi, Francesca
Nano Letters, Vol. 16, Issue 1
DOI: 10.1021/acs.nanolett.5b04367

Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films
journal, September 2011

Lee, Chul-Ho; Kim, Yong-Jin; Hong, Young Joon
Advanced Materials, Vol. 23, Issue 40
DOI: 10.1002/adma.201102407

An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires
journal, February 2006

Akiyama, Toru; Sano, Kosuke; Nakamura, Kohji
Japanese Journal of Applied Physics, Vol. 45, Issue No. 9
DOI: 10.1143/JJAP.45.L275

Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
journal, March 2010

Joyce, Hannah J.; Wong-Leung, Jennifer; Gao, Qiang
Nano Letters, Vol. 10, Issue 3
DOI: 10.1021/nl903688v

Twinning superlattices in indium phosphide nanowires
journal, November 2008

Algra, Rienk E.; Verheijen, Marcel A.; Borgström, Magnus T.
Nature, Vol. 456, Issue 7220
DOI: 10.1038/nature07570

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene
journal, February 2012

Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping
Nano Letters, Vol. 12, Issue 3
DOI: 10.1021/nl204109t

Polytypism of GaAs, InP, InAs, and InSb: An ab initio study
journal, August 2011

Panse, Christian; Kriegner, Dominik; Bechstedt, Friedhelm
Physical Review B, Vol. 84, Issue 7
DOI: 10.1103/PhysRevB.84.075217

Single-crystalline kinked semiconductor nanowire superstructures
journal, October 2009

Tian, Bozhi; Xie, Ping; Kempa, Thomas J.
Nature Nanotechnology, Vol. 4, Issue 12
DOI: 10.1038/nnano.2009.304

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
journal, January 2008

Dubrovskii, V. G.; Sibirev, N. V.
Physical Review B, Vol. 77, Issue 3
DOI: 10.1103/PhysRevB.77.035414

Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
journal, February 2014

Sourribes, Marion J. L.; Isakov, Ivan; Panfilova, Marina
Nano Letters, Vol. 14, Issue 3
DOI: 10.1021/nl5001554

Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
journal, October 2007

Glas, Frank; Harmand, Jean-Christophe; Patriarche, Gilles
Physical Review Letters, Vol. 99, Issue 14
DOI: 10.1103/PhysRevLett.99.146101

Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices
journal, August 2011

Hong, Young Joon; Fukui, Takashi
ACS Nano, Vol. 5, Issue 9
DOI: 10.1021/nn2025786

Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots
journal, June 2016

Chung, Kunook; Yoo, Hyobin; Hyun, Jerome K.
Advanced Materials, Vol. 28, Issue 35
DOI: 10.1002/adma.201601894

Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires
journal, September 2016

Ahtapodov, L.; Munshi, A. M.; Nilsen, J. S.
Nanotechnology, Vol. 27, Issue 44
DOI: 10.1088/0957-4484/27/44/445711

Controlled polytypic and twin-plane superlattices in iii–v nanowires
journal, November 2008

Caroff, P.; Dick, K. A.; Johansson, J.
Nature Nanotechnology, Vol. 4, Issue 1
DOI: 10.1038/nnano.2008.359

Vertically aligned ZnO nanostructures grown on graphene layers
journal, November 2009

Kim, Yong-Jin; Lee, Jae-Hyun; Yi, Gyu-Chul
Applied Physics Letters, Vol. 95, Issue 21
DOI: 10.1063/1.3266836

Position- and Morphology-Controlled ZnO Nanostructures Grown on Graphene Layers
journal, August 2012

Kim, Yong-Jin; Yoo, Hyobin; Lee, Chul-Ho
Advanced Materials, Vol. 24, Issue 41
DOI: 10.1002/adma.201201966

Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures
journal, February 2009

Pemasiri, Kuranananda; Montazeri, Mohammad; Gass, Richard
Nano Letters, Vol. 9, Issue 2
DOI: 10.1021/nl802997p

Interface dynamics and crystal phase switching in GaAs nanowires
journal, March 2016

Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry
Nature, Vol. 531, Issue 7594
DOI: 10.1038/nature17148

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
journal, October 2010

Paiman, S.; Gao, Q.; Joyce, H. J.
Journal of Physics D: Applied Physics, Vol. 43, Issue 44
DOI: 10.1088/0022-3727/43/44/445402

Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires
journal, January 2012

Heo, Hoseok; Kang, Kibum; Lee, Donghun
Nano Letters, Vol. 12, Issue 2
DOI: 10.1021/nl203900q

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm
journal, February 2014

Pan, Dong; Fu, Mengqi; Yu, Xuezhe
Nano Letters, Vol. 14, Issue 3
DOI: 10.1021/nl4040847

Combinatorial Approaches to Understanding Polytypism in III–V Nanowires
journal, June 2012

Johansson, Jonas; Bolinsson, Jessica; Ek, Martin
ACS Nano, Vol. 6, Issue 7
DOI: 10.1021/nn301477x

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth
journal, June 2016

Shen, Youde; Chen, Renjie; Yu, Xuechao
Nano Letters, Vol. 16, Issue 7
DOI: 10.1021/acs.nanolett.6b01037

III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects
journal, August 2007

Dayeh, Shadi A.; Yu, Edward T.; Wang, Deli
Nano Letters, Vol. 7, Issue 8
DOI: 10.1021/nl0712668

In _x Ga _{1– x} As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation
journal, February 2013

Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D.
Nano Letters, Vol. 13, Issue 3
DOI: 10.1021/nl304569d

Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
journal, April 2011

Kriegner, Dominik; Panse, Christian; Mandl, Bernhard
Nano Letters, Vol. 11, Issue 4
DOI: 10.1021/nl1041512

Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
journal, August 1992

Koma, Atsushi
Thin Solid Films, Vol. 216, Issue 1
DOI: 10.1016/0040-6090(92)90872-9

Crystal Phase Engineering in Single InAs Nanowires
journal, September 2010

Dick, Kimberly A.; Thelander, Claes; Samuelson, Lars
Nano Letters, Vol. 10, Issue 9
DOI: 10.1021/nl101632a

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
journal, January 2012

Munshi, A. Mazid; Dheeraj, Dasa L.; Fauske, Vidar T.
Nano Letters, Vol. 12, Issue 9
DOI: 10.1021/nl3018115

Metastable Growth of Pure Wurtzite InGaAs Microstructures
journal, July 2014

Ng, Kar Wei; Ko, Wai Son; Lu, Fanglu
Nano Letters, Vol. 14, Issue 8
DOI: 10.1021/nl501887f

Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
text, January 2007

Glas, F.; Harmand, J. -C.; Patriarche, G.
arXiv
DOI: 10.48550/arxiv.0706.0846

Works referencing / citing this record:

Remote homoepitaxy of ZnO microrods across graphene layers
journal, January 2018

Jeong, Junseok; Min, Kyung-Ah; Shin, Dong Hoon
Nanoscale, Vol. 10, Issue 48
DOI: 10.1039/c8nr08084d

Enhanced ultraviolet emission from self-assembled ZnO nanorods grown on graphene
journal, December 2018

Das, S. K.; Pradhan, Gopal K.; Singh, Avanendra
Journal of Applied Physics, Vol. 124, Issue 23
DOI: 10.1063/1.5064395

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Title: Crystal-phase intergradation in InAs nanostructures grown by van der Waals heteroepitaxy on graphene

Citation Formats

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires journal, June 2011

Control of InAs Nanowire Growth Directions on Si journal, October 2008

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The Role of Surface Energies and Chemical Potential during Nanowire Growth journal, March 2011

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Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films journal, September 2011

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Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters journal, March 2010

Twinning superlattices in indium phosphide nanowires journal, November 2008

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene journal, February 2012

Polytypism of GaAs, InP, InAs, and InSb: An ab initio study journal, August 2011

Single-crystalline kinked semiconductor nanowire superstructures journal, October 2009

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires journal, January 2008

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Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors? journal, October 2007

Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices journal, August 2011

Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots journal, June 2016

Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires journal, September 2016

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Vertically aligned ZnO nanostructures grown on graphene layers journal, November 2009

Position- and Morphology-Controlled ZnO Nanostructures Grown on Graphene Layers journal, August 2012

Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures journal, February 2009

Interface dynamics and crystal phase switching in GaAs nanowires journal, March 2016

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires journal, October 2010

Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires journal, January 2012

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm journal, February 2014

Combinatorial Approaches to Understanding Polytypism in III–V Nanowires journal, June 2012

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth journal, June 2016

III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects journal, August 2007

In x Ga 1– x As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation journal, February 2013

Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires journal, April 2011

Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system journal, August 1992

Crystal Phase Engineering in Single InAs Nanowires journal, September 2010

Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth journal, January 2012

Metastable Growth of Pure Wurtzite InGaAs Microstructures journal, July 2014

Why does wurtzite form in nanowires of III-V zinc-blende semiconductors? text, January 2007

Remote homoepitaxy of ZnO microrods across graphene layers journal, January 2018

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Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires
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Control of InAs Nanowire Growth Directions on Si
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Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs
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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
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Interface dynamics and crystal phase switching in GaAs nanowires
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Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm
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Combinatorial Approaches to Understanding Polytypism in III–V Nanowires
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Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth
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III−V Nanowire Growth Mechanism: V/III Ratio and Temperature Effects
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Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
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Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
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Crystal Phase Engineering in Single InAs Nanowires
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Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
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Metastable Growth of Pure Wurtzite InGaAs Microstructures
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Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
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