Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si
Abstract
The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ~ -30 °C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ~ 0.1 eV , independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ~ 0.04 at.%, evidenced by an increase in the activation energy. Thesemore »
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1529190
- Alternate Identifier(s):
- OSTI ID: 1439127
- Report Number(s):
- LLNL-JRNL-744458
Journal ID: ISSN 0031-9007; PRLTAO; 898774
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 21; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE
Citation Formats
Wallace, J. B., Aji, L. B. Bayu, Shao, L., and Kucheyev, S. O. Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si. United States: N. p., 2018.
Web. doi:10.1103/PhysRevLett.120.216101.
Wallace, J. B., Aji, L. B. Bayu, Shao, L., & Kucheyev, S. O. Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si. United States. https://doi.org/10.1103/PhysRevLett.120.216101
Wallace, J. B., Aji, L. B. Bayu, Shao, L., and Kucheyev, S. O. Fri .
"Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si". United States. https://doi.org/10.1103/PhysRevLett.120.216101. https://www.osti.gov/servlets/purl/1529190.
@article{osti_1529190,
title = {Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si},
author = {Wallace, J. B. and Aji, L. B. Bayu and Shao, L. and Kucheyev, S. O.},
abstractNote = {The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ~ -30 °C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ~ 0.1 eV , independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ~ 0.04 at.%, evidenced by an increase in the activation energy. These results clearly demonstrate a crucial role of the collision cascade density and can be used to predict radiation defect dynamics in Si.},
doi = {10.1103/PhysRevLett.120.216101},
journal = {Physical Review Letters},
number = 21,
volume = 120,
place = {United States},
year = {Fri May 25 00:00:00 EDT 2018},
month = {Fri May 25 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 9, Issue 1
Deep learning inter-atomic potential model for accurate irradiation damage simulations
journal, June 2019
- Wang, Hao; Guo, Xun; Zhang, Linfeng
- Applied Physics Letters, Vol. 114, Issue 24
Control of superconductivity in MgB 2 by ion bombardment
journal, May 2019
- Baker, A. A.; Bayu Aji, L. B.; Bae, J. H.
- Journal of Physics D: Applied Physics, Vol. 52, Issue 29
Deep learning inter-atomic potential model for accurate irradiation damage simulations
text, January 2019
- Wang, Hao; Guo, Xun; Zhang, Linfeng
- arXiv