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Title: Radiation defect dynamics in GaAs studied by pulsed ion beams

Abstract

Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.

Authors:
ORCiD logo [1];  [2];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1488820
Alternate Identifier(s):
OSTI ID: 1459479
Report Number(s):
LLNL-JRNL-749651
Journal ID: ISSN 0021-8979; 934897
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 2; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS; 36 MATERIALS SCIENCE; Military science

Citation Formats

Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Radiation defect dynamics in GaAs studied by pulsed ion beams. United States: N. p., 2018. Web. doi:10.1063/1.5038018.
Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Radiation defect dynamics in GaAs studied by pulsed ion beams. United States. doi:10.1063/1.5038018.
Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Sat . "Radiation defect dynamics in GaAs studied by pulsed ion beams". United States. doi:10.1063/1.5038018. https://www.osti.gov/servlets/purl/1488820.
@article{osti_1488820,
title = {Radiation defect dynamics in GaAs studied by pulsed ion beams},
author = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},
abstractNote = {Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.},
doi = {10.1063/1.5038018},
journal = {Journal of Applied Physics},
number = 2,
volume = 124,
place = {United States},
year = {2018},
month = {7}
}

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