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Title: Radiation defect dynamics in Si at room temperature studied by pulsed ion beams

Abstract

The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here in this paper, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length is revealed by the dependence of damage on the active part of the beam duty cycle. Results show that the defect relaxation behavior obeys a second order kinetic process for all the cases studied, with a time constant in the range of ~4–13 ms and a diffusion length of ~15–50 nm. Both radiation dynamics parameters (the time constant and diffusion length) are essentially independent of the maximum instantaneous dose rate, total ion dose, and dopant concentration within the ranges studied. However, both the time constant and diffusion length increase with increasing ion mass. This demonstrates that the density of collision cascadesmore » influences not only defect production and annealing efficiencies but also the defect interaction dynamics.« less

Authors:
 [1];  [2];  [2];  [1];  [3];  [2]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE)
OSTI Identifier:
1409995
Report Number(s):
LLNL-JRNL-675679
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 118; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Ion radiation effects; Ion beams; Radiation damage; Doping; Defect diffusion

Citation Formats

Wallace, J. B., Charnvanichborikarn, S., Bayu Aji, L. B., Myers, M. T., Shao, L., and Kucheyev, S. O. Radiation defect dynamics in Si at room temperature studied by pulsed ion beams. United States: N. p., 2015. Web. doi:10.1063/1.4932209.
Wallace, J. B., Charnvanichborikarn, S., Bayu Aji, L. B., Myers, M. T., Shao, L., & Kucheyev, S. O. Radiation defect dynamics in Si at room temperature studied by pulsed ion beams. United States. doi:10.1063/1.4932209.
Wallace, J. B., Charnvanichborikarn, S., Bayu Aji, L. B., Myers, M. T., Shao, L., and Kucheyev, S. O. Tue . "Radiation defect dynamics in Si at room temperature studied by pulsed ion beams". United States. doi:10.1063/1.4932209. https://www.osti.gov/servlets/purl/1409995.
@article{osti_1409995,
title = {Radiation defect dynamics in Si at room temperature studied by pulsed ion beams},
author = {Wallace, J. B. and Charnvanichborikarn, S. and Bayu Aji, L. B. and Myers, M. T. and Shao, L. and Kucheyev, S. O.},
abstractNote = {The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here in this paper, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length is revealed by the dependence of damage on the active part of the beam duty cycle. Results show that the defect relaxation behavior obeys a second order kinetic process for all the cases studied, with a time constant in the range of ~4–13 ms and a diffusion length of ~15–50 nm. Both radiation dynamics parameters (the time constant and diffusion length) are essentially independent of the maximum instantaneous dose rate, total ion dose, and dopant concentration within the ranges studied. However, both the time constant and diffusion length increase with increasing ion mass. This demonstrates that the density of collision cascades influences not only defect production and annealing efficiencies but also the defect interaction dynamics.},
doi = {10.1063/1.4932209},
journal = {Journal of Applied Physics},
number = 13,
volume = 118,
place = {United States},
year = {2015},
month = {10}
}

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Cited by: 15 works
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    Works referencing / citing this record:

    Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
    journal, December 2018


    Irradiation of materials with short, intense ion pulses at NDCX-II
    journal, May 2017


    Impact of pre-existing disorder on radiation defect dynamics in Si
    journal, August 2019


    Radiation defect dynamics in GaAs studied by pulsed ion beams
    journal, July 2018

    • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
    • Journal of Applied Physics, Vol. 124, Issue 2
    • DOI: 10.1063/1.5038018

    Radiation defect dynamics in SiC with pre-existing defects
    journal, June 2019

    • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
    • Journal of Applied Physics, Vol. 125, Issue 23
    • DOI: 10.1063/1.5093640