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This content will become publicly available on October 25, 2018

Title: Atomically Thin Femtojoule Memristive Device

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary-type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. In this paper, the formation of conductive filaments in a material medium with sub-nanometer thickness formed through the oxidation of atomically thin two-dimensional boron nitride is studied. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. Finally, these ultralow energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ;  [1] ;  [6] ;  [1] ;  [7] ;  [1] ;  [1] ;  [3] ;  [2] ; ORCiD logo [1]
  1. Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Electrical and Computer Engineering
  3. Northrop Grumman Aerospace Systems, Redondo Beach, CA (United States). NG Next
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Sciences Dept.
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
  6. Zhejiang Univ. of Technology, Hangzhou (China). Center for Optics & Optoelectronics Research (COOR). Collaborative Innovation Center for Information Technology in Biological and Medical Physics
  7. IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
Publication Date:
Report Number(s):
BNL-203225-2018-JAAM
Journal ID: ISSN 0935-9648
Grant/Contract Number:
SC0012704; FG02-07ER46376; W911NF-16-1-0435; FA9550-15-1-0514; CCF-1618038; CCF-1618762
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 47; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 47 OTHER INSTRUMENTATION
OSTI Identifier:
1425078
Alternate Identifier(s):
OSTI ID: 1404733