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Title: Atomically Thin Femtojoule Memristive Device

Abstract

Abstract The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.

Authors:
 [1];  [2];  [1];  [3];  [4];  [5];  [1];  [6];  [1];  [7];  [1];  [1];  [3];  [2]; ORCiD logo [1]
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  1. Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Electrical and Computer Engineering
  3. Northrop Grumman Aerospace Systems, Redondo Beach, CA (United States). NG Next
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Sciences Dept.
  5. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
  6. Zhejiang Univ. of Technology, Hangzhou (China). Center for Optics & Optoelectronics Research (COOR). Collaborative Innovation Center for Information Technology in Biological and Medical Physics
  7. IBM T. J. Watson Research Center, Yorktown Heights, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
OSTI Identifier:
1425078
Alternate Identifier(s):
OSTI ID: 1404733
Report Number(s):
BNL-203225-2018-JAAM
Journal ID: ISSN 0935-9648; TRN: US1802035
Grant/Contract Number:  
SC0012704; FG02-07ER46376; W911NF-16-1-0435; FA9550-15-1-0514; CCF-1618038; CCF-1618762; DE‐SC0012704; DE‐FG02‐07ER46376
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 47; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; 47 OTHER INSTRUMENTATION

Citation Formats

Zhao, Huan, Dong, Zhipeng, Tian, He, DiMarzi, Don, Han, Myung-Geun, Zhang, Lihua, Yan, Xiaodong, Liu, Fanxin, Shen, Lang, Han, Shu-Jen, Cronin, Steve, Wu, Wei, Tice, Jesse, Guo, Jing, and Wang, Han. Atomically Thin Femtojoule Memristive Device. United States: N. p., 2017. Web. doi:10.1002/adma.201703232.
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Zhao, Huan, Dong, Zhipeng, Tian, He, DiMarzi, Don, Han, Myung-Geun, Zhang, Lihua, Yan, Xiaodong, Liu, Fanxin, Shen, Lang, Han, Shu-Jen, Cronin, Steve, Wu, Wei, Tice, Jesse, Guo, Jing, & Wang, Han. Atomically Thin Femtojoule Memristive Device. United States. https://doi.org/10.1002/adma.201703232
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Zhao, Huan, Dong, Zhipeng, Tian, He, DiMarzi, Don, Han, Myung-Geun, Zhang, Lihua, Yan, Xiaodong, Liu, Fanxin, Shen, Lang, Han, Shu-Jen, Cronin, Steve, Wu, Wei, Tice, Jesse, Guo, Jing, and Wang, Han. Wed . "Atomically Thin Femtojoule Memristive Device". United States. https://doi.org/10.1002/adma.201703232. https://www.osti.gov/servlets/purl/1425078.
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@article{osti_1425078,
title = {Atomically Thin Femtojoule Memristive Device},
author = {Zhao, Huan and Dong, Zhipeng and Tian, He and DiMarzi, Don and Han, Myung-Geun and Zhang, Lihua and Yan, Xiaodong and Liu, Fanxin and Shen, Lang and Han, Shu-Jen and Cronin, Steve and Wu, Wei and Tice, Jesse and Guo, Jing and Wang, Han},
abstractNote = {Abstract The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary‐type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on‐state current and the switching voltage. Here, the formation of conductive filaments in a material medium with sub‐nanometer thickness formed through the oxidation of atomically thin two‐dimensional boron nitride is studied. The resulting memristive device exhibits sub‐nanometer filamentary switching with sub‐pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultralow energy devices are promising for realizing femtojoule and sub‐femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.},
doi = {10.1002/adma.201703232},
journal = {Advanced Materials},
number = 47,
volume = 29,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}
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https://doi.org/10.1002/adma.201703232
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    Works referencing / citing this record:

    A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film
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    2D Layered Materials for Memristive and Neuromorphic Applications
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    • Advanced Electronic Materials, Vol. 6, Issue 2
    • DOI: 10.1002/aelm.201901107

    A Pure 2H‐MoS 2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator
    journal, January 2020

    • Wang, Kaiyang; Li, Liteng; Zhao, Rujie
    • Advanced Electronic Materials, Vol. 6, Issue 3
    • DOI: 10.1002/aelm.201901342

    Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS 2 Surface
    journal, April 2019

    A hardware Markov chain algorithm realized in a single device for machine learning
    journal, October 2018

    Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
    journal, March 2019

    Efficient learning and crossbar operations with atomically-thin 2-D material compound synapses
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    • Sanchez Esqueda, Ivan; Zhao, Huan; Wang, Han
    • Journal of Applied Physics, Vol. 124, Issue 15
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    Electronic synapses with near-linear weight update using MoS 2 /graphene memristors
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    • Krishnaprasad, Adithi; Choudhary, Nitin; Das, Sonali
    • Applied Physics Letters, Vol. 115, Issue 10
    • DOI: 10.1063/1.5108899

    Brain-inspired computing with memristors: Challenges in devices, circuits, and systems
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    Synaptic functions and a memristive mechanism on Pt/AlO x /HfO x /TiN bilayer-structure memristors
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    Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor
    journal, January 2019

    Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching
    text, January 2019

    A hardware Markov chain algorithm realized in a single device for machine learning
    journal, October 2018

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