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Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Abstract

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411606
Report Number(s):
SAND2017-6813J
Journal ID: ISSN 0021-8979; 654869; TRN: US1800245
Grant/Contract Number:  
AC04-94AL85000; NA0003525; W911NF-10-1-0524
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States: N. p., 2018. Web. doi:10.1063/1.4993673.
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Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., & Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States. https://doi.org/10.1063/1.4993673
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Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sat . "Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb". United States. https://doi.org/10.1063/1.4993673. https://www.osti.gov/servlets/purl/1411606.
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@article{osti_1411606,
title = {Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb},
author = {Kim, Honggyu and Meng, Yifei and Klem, John F. and Hawkins, Samuel D. and Kim, Jin K. and Zuo, Jian-Min},
abstractNote = {Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.},
doi = {10.1063/1.4993673},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {2018},
month = {4}
}
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https://doi.org/10.1063/1.4993673
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Works referenced in this record:

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
journal, February 2012

  • Lackner, D.; Steger, M.; Thewalt, M. L. W.
  • Journal of Applied Physics, Vol. 111, Issue 3
  • DOI: 10.1063/1.3681328

Auger lifetime enhancement in InAs–Ga 1− x In x Sb superlattices
journal, June 1994

  • Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A.
  • Applied Physics Letters, Vol. 64, Issue 23
  • DOI: 10.1063/1.111325

Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices
journal, July 2014

  • Meng, Yifei; Kim, Honggyu; Rouviére, Jean-Luc
  • Journal of Applied Physics, Vol. 116, Issue 1
  • DOI: 10.1063/1.4887078

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013

  • Olson, B. V.; Shaner, E. A.; Kim, J. K.
  • Applied Physics Letters, Vol. 103, Issue 5
  • DOI: 10.1063/1.4817400

Quantitative analysis of strain distribution in InAs/InAs 1−x Sb x superlattices
journal, August 2013

  • Mahalingam, Krishnamurthy; Steenbergen, Elizabeth H.; Brown, Gail J.
  • Applied Physics Letters, Vol. 103, Issue 6
  • DOI: 10.1063/1.4817969

Charged point defects in semiconductors
journal, December 2006

  • Seebauer, Edmund G.; Kratzer, Meredith C.
  • Materials Science and Engineering: R: Reports, Vol. 55, Issue 3-6
  • DOI: 10.1016/j.mser.2006.01.002

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
journal, November 2011

Native point defect energetics in GaSb: Enabling p -type conductivity of undoped GaSb
journal, October 2012

Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
journal, August 2009

  • Lackner, D.; Pitts, O. J.; Steger, M.
  • Applied Physics Letters, Vol. 95, Issue 8
  • DOI: 10.1063/1.3216041

Understanding ion-milling damage in Hg1−xCdxTe epilayers
journal, July 2006

  • Wang, Changzhen; Smith, David J.; Tobin, Steve
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 4
  • DOI: 10.1116/1.2207148

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
journal, December 2010

  • Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen
  • Applied Physics Letters, Vol. 97, Issue 25
  • DOI: 10.1063/1.3529458

The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials
journal, November 1986

  • Treacy, M. M. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, Issue 6
  • DOI: 10.1116/1.583473

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
journal, June 2014

  • Hoang, A. M.; Chen, G.; Chevallier, R.
  • Applied Physics Letters, Vol. 104, Issue 25
  • DOI: 10.1063/1.4884947

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
journal, October 2012

  • Kim, H. S.; Cellek, O. O.; Lin, Zhi-Yuan
  • Applied Physics Letters, Vol. 101, Issue 16
  • DOI: 10.1063/1.4760260

Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices
journal, November 2015

  • Lin, Zhi-Yuan; Liu, Shi; Steenbergen, Elizabeth H.
  • Applied Physics Letters, Vol. 107, Issue 20
  • DOI: 10.1063/1.4936109

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
journal, August 2010

  • Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan
  • Applied Physics Letters, Vol. 97, Issue 5
  • DOI: 10.1063/1.3476352

Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
journal, September 2015

Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy
journal, October 2013

Study of interface asymmetry in InAs–GaSb heterojunctions
journal, July 1995

  • Wang, M. W.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 4
  • DOI: 10.1116/1.587879

A designing principle for low dark-current strained layer superlattices
journal, January 2017

  • Krishnamurthy, S.; Yu, Zhi-Gang
  • Applied Physics Letters, Vol. 110, Issue 2
  • DOI: 10.1063/1.4974031

Atom-selective imaging of the GaAs(110) surface
journal, March 1987

Evaluation of antimony segregation in InAs/InAs 1−x Sb x type-II superlattices grown by molecular beam epitaxy
journal, March 2016

  • Lu, Jing; Luna, Esperanza; Aoki, Toshihiro
  • Journal of Applied Physics, Vol. 119, Issue 9
  • DOI: 10.1063/1.4942844

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
journal, July 2014

  • Aytac, Y.; Olson, B. V.; Kim, J. K.
  • Applied Physics Letters, Vol. 105, Issue 2
  • DOI: 10.1063/1.4890578

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
journal, December 2015

  • Webster, P. T.; Riordan, N. A.; Liu, S.
  • Journal of Applied Physics, Vol. 118, Issue 24
  • DOI: 10.1063/1.4939293

Origin of Antimony Segregation in GaInSb / InAs Strained-Layer Superlattices
journal, November 2000

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
journal, November 2009

  • Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E.
  • Applied Physics Letters, Vol. 95, Issue 21
  • DOI: 10.1063/1.3267103

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
journal, December 2011

  • Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D.
  • Applied Physics Letters, Vol. 99, Issue 25
  • DOI: 10.1063/1.3671398

Depth sectioning with the aberration-corrected scanning transmission electron microscope
journal, February 2006

  • Borisevich, A. Y.; Lupini, A. R.; Pennycook, S. J.
  • Proceedings of the National Academy of Sciences, Vol. 103, Issue 9
  • DOI: 10.1073/pnas.0507105103

An ab initio study of the cleavage anisotropy in silicon
journal, December 2000

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156

Proposal for strained type II superlattice infrared detectors
journal, September 1987

  • Smith, D. L.; Mailhiot, C.
  • Journal of Applied Physics, Vol. 62, Issue 6
  • DOI: 10.1063/1.339468

Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures
journal, March 2003

Quantitative measurement of displacement and strain fields from HREM micrographs
journal, August 1998

Exploring optimum growth for high quality InAs/GaSb type-II superlattices
journal, February 2004

Artefacts in geometric phase analysis of compound materials
journal, October 2015

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
journal, August 1992

  • Muraki, K.; Fukatsu, S.; Shiraki, Y.
  • Applied Physics Letters, Vol. 61, Issue 5
  • DOI: 10.1063/1.107835

Direct Observation of Sr Vacancies in SrTiO 3 by Quantitative Scanning Transmission Electron Microscopy
journal, December 2016

Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
journal, January 2014

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices
journal, March 2013

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    Works referencing / citing this record:

    Modeling Energy Bands in Type II Superlattices
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    • Becer, Zoubir; Bennecer, Abdeldjalil; Sengouga, Noureddine
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