Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Kim, Honggyu; Meng, Yifei; Klem, John F.; Hawkins, Samuel D.; Kim, Jin K.; Zuo, Jian-Min

doi:10.1063/1.4993673

Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Abstract

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

Authors:

Kim, Honggyu ^[1];

^[1]; Klem, John F. ^[2]; Hawkins, Samuel D. ^[2]; Kim, Jin K. ^[2]; Zuo, Jian-Min ^[1]

Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Sat Apr 28 00:00:00 EDT 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1411606

Report Number(s):: SAND2017-6813J
Journal ID: ISSN 0021-8979; 654869; TRN: US1800245

Grant/Contract Number:: AC04-94AL85000; NA0003525; W911NF-10-1-0524

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 123; Journal Issue: 16; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb.  United States: N. p., 2018. 
Web.  doi:10.1063/1.4993673.

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                    Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., & Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb.  United States.  https://doi.org/10.1063/1.4993673

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                    Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sat .  
"Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb".  United States.  https://doi.org/10.1063/1.4993673.  https://www.osti.gov/servlets/purl/1411606.

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@article{osti_1411606,

  title        = {Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb},

  author       = {Kim, Honggyu and Meng, Yifei and Klem, John F. and Hawkins, Samuel D. and Kim, Jin K. and Zuo, Jian-Min},

  abstractNote = {Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.},

  doi          = {10.1063/1.4993673},

  journal      = {Journal of Applied Physics},

  number       = 16,

  volume       = 123,

  place        = {United States},

  year         = {Sat Apr 28 00:00:00 EDT 2018},

  month        = {Sat Apr 28 00:00:00 EDT 2018}

}

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Works referencing / citing this record:

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journal, November 2019

Becer, Zoubir; Bennecer, Abdeldjalil; Sengouga, Noureddine
Crystals, Vol. 9, Issue 12
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Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Abstract

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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices journal, July 2014

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Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices journal, March 2002

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Understanding ion-milling damage in Hg1−xCdxTe epilayers
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Exploring optimum growth for high quality InAs/GaSb type-II superlattices
journal, February 2004

Artefacts in geometric phase analysis of compound materials
journal, October 2015

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
journal, August 1992

Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
journal, January 2014

Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices
journal, March 2013

Modeling Energy Bands in Type II Superlattices
journal, November 2019