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Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy
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Digital model for X-ray diffraction with application to composition and strain determination in strained InAs/GaSb superlattices
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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
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Quantitative analysis of strain distribution in InAs/InAs 1−x Sb x superlattices
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Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
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Understanding ion-milling damage in Hg1−xCdxTe epilayers
- Wang, Changzhen; Smith, David J.; Tobin, Steve
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 4
https://doi.org/10.1116/1.2207148
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Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
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Thin Film Materials
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The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials
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High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection
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Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
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Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices
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Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
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Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy
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Study of interface asymmetry in InAs–GaSb heterojunctions
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A designing principle for low dark-current strained layer superlattices
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Atom-selective imaging of the GaAs(110) surface
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Evaluation of antimony segregation in InAs/InAs 1−x Sb x type-II superlattices grown by molecular beam epitaxy
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March 2016 |
Advanced Transmission Electron Microscopy: Imaging and Diffraction Nanoscience
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January 2017 |
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
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Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy
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Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice
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Origin of Antimony Segregation in GaInSb / InAs Strained-Layer Superlattices
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Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
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Depth sectioning with the aberration-corrected scanning transmission electron microscope
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An ab initio study of the cleavage anisotropy in silicon
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Band parameters for III–V compound semiconductors and their alloys
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Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices
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March 2002 |
Proposal for strained type II superlattice infrared detectors
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September 1987 |
Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures
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Quantitative measurement of displacement and strain fields from HREM micrographs
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August 1998 |
Exploring optimum growth for high quality InAs/GaSb type-II superlattices
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Artefacts in geometric phase analysis of compound materials
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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
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Lattice and strain analysis of atomic resolution Z-contrast images based on template matching
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Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices
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