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Title: Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb

Abstract

Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [2];  [1]
  1. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering, Frederick Seitz Materials Research Lab.
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories (SNL-CA), Livermore, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1411606
Report Number(s):
SAND2017-6813J
Journal ID: ISSN 0021-8979; 654869; TRN: US1800245
Grant/Contract Number:  
AC04-94AL85000; NA0003525; W911NF-10-1-0524
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States: N. p., 2018. Web. doi:10.1063/1.4993673.
Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., & Zuo, Jian-Min. Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. United States. doi:10.1063/1.4993673.
Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., and Zuo, Jian-Min. Sat . "Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb". United States. doi:10.1063/1.4993673. https://www.osti.gov/servlets/purl/1411606.
@article{osti_1411606,
title = {Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb},
author = {Kim, Honggyu and Meng, Yifei and Klem, John F. and Hawkins, Samuel D. and Kim, Jin K. and Zuo, Jian-Min},
abstractNote = {Here, we show that Sb substitution for As in a MBE grown InAs/InAsSb strained layer superlattice (SLS) is accompanied by significant strain fluctuations. The SLS was observed using scanning transmission electron microscopy along the [100] zone axis where the cation and anion atomic columns are separately resolved. Strain analysis based on atomic column positions reveals asymmetrical transitions in the strain profile across the SLS interfaces. The averaged strain profile is quantitatively fitted to the segregation model, which yields a distribution of Sb in agreement with our scanning tunneling microscopy result. The subtraction of the calculated strain reveals an increase in strain fluctuations with the Sb concentration, as well as isolated regions with large strain deviations extending spatially over ~1 nm, which suggest the presence of point defects.},
doi = {10.1063/1.4993673},
journal = {Journal of Applied Physics},
number = 16,
volume = 123,
place = {United States},
year = {2018},
month = {4}
}

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