skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition

Abstract

The authors report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InPSb as well as mid-infrared optically pumped lasers grown using a high speed rotating disk-reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, they have prepared structures with low temperature (< 20 K) photoluminescence wavelengths ranging from 3.4 to 4.8 {micro}m. They find a variation in bandgap of 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data they have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. The optical properties of the superlattices revealed an anomalous low energy transition that can be assigned to an antimony rich interfacial layer in the superlattice. An InAsSb/InPSb SLS, laser was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 200 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 72 K, from 80 to 200 K.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
9565
Report Number(s):
SAND99-0728C
TRN: AH200124%%401
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Eleventh American Conference on Crystal Growth and Epitaxy, Tucson, AZ (US), 08/01/1999--08/06/1999; Other Information: PBD: 9 Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTIMONY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SUBSTRATES; SUPERLATTICES; TEMPERATURE DEPENDENCE; VALENCE; WAVELENGTHS

Citation Formats

Biefeld, R.M., Kurtz, S.R., and Phillips, J.D. InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition. United States: N. p., 1999. Web.
Biefeld, R.M., Kurtz, S.R., & Phillips, J.D. InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition. United States.
Biefeld, R.M., Kurtz, S.R., and Phillips, J.D. Mon . "InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition". United States. https://www.osti.gov/servlets/purl/9565.
@article{osti_9565,
title = {InAsSb/InPSb Strained-Layer Superlattice Growth Using Metal-Organic Chemical Vapor Deposition},
author = {Biefeld, R.M. and Kurtz, S.R. and Phillips, J.D.},
abstractNote = {The authors report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InPSb as well as mid-infrared optically pumped lasers grown using a high speed rotating disk-reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, they have prepared structures with low temperature (< 20 K) photoluminescence wavelengths ranging from 3.4 to 4.8 {micro}m. They find a variation in bandgap of 0.272 to 0.324 eV for layer thicknesses of 9.0 to 18.2 nm. From these data they have estimated a valence band offset for the InAsSb/InPSb interface of about 400 meV. The optical properties of the superlattices revealed an anomalous low energy transition that can be assigned to an antimony rich interfacial layer in the superlattice. An InAsSb/InPSb SLS, laser was grown on an InAs substrate with AlAs{sub 0.16}Sb{sub 0.84} cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 200 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T{sub 0} = 72 K, from 80 to 200 K.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: