The growth of InAsSb/InGaAs strained-layer superlattices by metal-organic chemical vapor deposition
We have grown InAs{sub l-x}Sb{sub x}/In{sub 1-y}Ga{sub y}As strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at 475 C, at pressures of 200 to 660 torr and growth rates of 3 {minus} 5 {angstrom}/s and layer thicknesses ranging from 55 to 152 {angstrom}. Composition of InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 {mu}m. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS`s were determined by infrared photoluminescence and absorption measurements.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10116651
- Report Number(s):
- SAND-93-1483C; CONF-931108-48; ON: DE94005576; BR: GB0103012
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),29 Nov - 3 Dec 1993; Other Information: PBD: [1993]
- Country of Publication:
- United States
- Language:
- English
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