Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM
Abstract
In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellent quantitative match to all important aspects of the x-ray data.
- Authors:
-
- Texas A & M Univ., College Station, TX (United States). Dept. of Physics and Astronomy
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Texas A & M Univ., College Station, TX (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)
- OSTI Identifier:
- 1340250
- Report Number(s):
- SAND2014-19677J
Journal ID: ISSN 0022-0248; PII: S0022024815001530
- Grant/Contract Number:
- AC04-94AL85000; W911NF-14-1-0645
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Volume: 425; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; High resolution x-ray diffraction; Scanning tunneling microscopy; Segregation; Molecular beam epitaxy; Superlattices; Semiconducting III–V materials
Citation Formats
Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., and Kim, J. K.. Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM. United States: N. p., 2015.
Web. doi:10.1016/j.jcrysgro.2015.02.063.
Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., & Kim, J. K.. Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM. United States. https://doi.org/10.1016/j.jcrysgro.2015.02.063
Wood, M. R., Kanedy, K., Lopez, F., Weimer, M., Klem, J. F., Hawkins, S. D., Shaner, E. A., and Kim, J. K.. Mon .
"Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM". United States. https://doi.org/10.1016/j.jcrysgro.2015.02.063. https://www.osti.gov/servlets/purl/1340250.
@article{osti_1340250,
title = {Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM},
author = {Wood, M. R. and Kanedy, K. and Lopez, F. and Weimer, M. and Klem, J. F. and Hawkins, S. D. and Shaner, E. A. and Kim, J. K.},
abstractNote = {In this paper, we use cross-sectional scanning tunneling microscopy (STM) to reconstruct the monolayer-by-monolayer composition profile across a representative subset of MBE-grown InAs/InAsSb superlattice layers and find that antimony segregation frustrates the intended compositional discontinuities across both antimonide-on-arsenide and arsenide-on-antimonide heterojunctions. Graded, rather than abrupt, interfaces are formed in either case. We likewise find that the incorporated antimony per superlattice period varies measurably from beginning to end of the multilayer stack. Finally, although the intended antimony discontinuities predict significant discrepancies with respect to the experimentally observed high-resolution x-ray diffraction spectrum, dynamical simulations based on the STM-derived profiles provide an excellent quantitative match to all important aspects of the x-ray data.},
doi = {10.1016/j.jcrysgro.2015.02.063},
journal = {Journal of Crystal Growth},
number = ,
volume = 425,
place = {United States},
year = {Mon Feb 23 00:00:00 EST 2015},
month = {Mon Feb 23 00:00:00 EST 2015}
}
Web of Science
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Works referencing / citing this record:
Ultra-short period Ga-free superlattice growth on GaSb
journal, July 2018
- Sarney, W. L.; Svensson, S. P.; Yakes, M. K.
- Journal of Applied Physics, Vol. 124, Issue 3
Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy
journal, January 2018
- Kanedy, K.; Lopez, F.; Wood, M. R.
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