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Title: Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10C 2+x:H y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10C 2+x:H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10C 2+x:H ymore » and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.« less
Authors:
 [1] ; ORCiD logo [2] ;  [3] ;  [1]
  1. Univ. of Nebraska, Lincoln, NE (United States). Dept. of Mechanical and Materials Engineering
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of Nebraska, Lincoln, NE (United States). Dept. of Electrical Engineering, Center for Microelectronics and Optical Materials Research
Publication Date:
Report Number(s):
LA-UR-17-27545
Journal ID: ISSN 0018-9499; TRN: US1703034
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 63; Journal Issue: 6; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; alpha particle radiation; conductance; hydrogenated boron carbides; neutron detector; p-n heterojunction; semiconducting boron carbides
OSTI Identifier:
1406231

Peterson, George G., Wang, Yongqiang, Ianno, N. J., and Nastasi, Michael. Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation. United States: N. p., Web. doi:10.1109/TNS.2016.2626268.
Peterson, George G., Wang, Yongqiang, Ianno, N. J., & Nastasi, Michael. Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation. United States. doi:10.1109/TNS.2016.2626268.
Peterson, George G., Wang, Yongqiang, Ianno, N. J., and Nastasi, Michael. 2016. "Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation". United States. doi:10.1109/TNS.2016.2626268. https://www.osti.gov/servlets/purl/1406231.
@article{osti_1406231,
title = {Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation},
author = {Peterson, George G. and Wang, Yongqiang and Ianno, N. J. and Nastasi, Michael},
abstractNote = {Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B10C2+x:Hy film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He+ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B10C2+x:Hy and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.},
doi = {10.1109/TNS.2016.2626268},
journal = {IEEE Transactions on Nuclear Science},
number = 6,
volume = 63,
place = {United States},
year = {2016},
month = {11}
}