Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Peterson, George G.; Wang, Yongqiang; Ianno, N. J.; Nastasi, Michael

doi:10.1109/TNS.2016.2626268

Title: Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

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Abstract

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B₁₀C_2+x:H_y) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B₁₀C_2+x:H_y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He⁺ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B₁₀C_2+x:H_y and irradiated silicon. In addition, it was found that aftermore »« less

Authors:

Peterson, George G. ^[1];

^[2]; Ianno, N. J. ^[3]; Nastasi, Michael ^[1]

Univ. of Nebraska, Lincoln, NE (United States). Dept. of Mechanical and Materials Engineering
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Univ. of Nebraska, Lincoln, NE (United States). Dept. of Electrical Engineering, Center for Microelectronics and Optical Materials Research

Publication Date:: Wed Nov 09 00:00:00 EST 2016

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC). Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1406231

Report Number(s):: LA-UR-17-27545
Journal ID: ISSN 0018-9499; TRN: US1703034

Grant/Contract Number:: AC52-06NA25396

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 63; Journal Issue: 6; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; alpha particle radiation; conductance; hydrogenated boron carbides; neutron detector; p-n heterojunction; semiconducting boron carbides

Citation Formats


                    Peterson, George G., Wang, Yongqiang, Ianno, N. J., and Nastasi, Michael. Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation.  United States: N. p., 2016. 
Web.  doi:10.1109/TNS.2016.2626268.

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                    Peterson, George G., Wang, Yongqiang, Ianno, N. J., & Nastasi, Michael. Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation.  United States.  https://doi.org/10.1109/TNS.2016.2626268

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                    Peterson, George G., Wang, Yongqiang, Ianno, N. J., and Nastasi, Michael. Wed .  
"Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation".  United States.  https://doi.org/10.1109/TNS.2016.2626268.  https://www.osti.gov/servlets/purl/1406231.

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@article{osti_1406231,

  title        = {Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation},

  author       = {Peterson, George G. and Wang, Yongqiang and Ianno, N. J. and Nastasi, Michael},

  abstractNote = {Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B10C2+x:Hy film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He+ ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B10C2+x:Hy and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.},

  doi          = {10.1109/TNS.2016.2626268},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 6,

  volume       = 63,

  place        = {United States},

  year         = {Wed Nov 09 00:00:00 EST 2016},

  month        = {Wed Nov 09 00:00:00 EST 2016}

}

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