Low resistivity p-type Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite transparent conducting oxide thin film fabricated by sol–gel method
- Department of Materials Science and Engineering, Pusan National University, 30 Jangjeon-Dong, Kumjeong-Gu, Busan 609-735 (Korea, Republic of)
Graphical abstract: Display Omitted Highlights: ► Cu{sub 2}O doped p-type AZO films was first prepared by sol–gel method. ► AZO:Cu{sub 2}O films showed a polycrystalline Cu{sub 2}O (1 1 0) and Cu (2 0 0) phases. ► p-Type conductivity was achieved by annealing in N{sub 2}/H{sub 2} forming gas at 400 °C. ► p–n junction (ITO/AZO:Cu{sub 2}O) revealed rectifying I–V characteristics. ► The mean optical transmittance of AZO:Cu{sub 2}Ofilms was >90%. -- Abstract: Highly transparent Cu{sub 2}O-doped p-type Zn{sub 1−x}Al{sub x}O (AZO; Al/Zn = 1.5 at%) conducting oxide films were synthesized on glass substrates using a cost effective low temperature sol–gel method. X-ray diffraction of the Cu{sub 2}O-doped AZO (AZO:Cu{sub 2}O) films revealed a polycrystalline Cu{sub 2}O (1 1 0) peak. The I–V measurements of the p–n junction (ITO/AZO:Cu{sub 2}O) revealed rectifying I–V characteristics, showing that these AZO:Cu{sub 2}O films exhibit p-type conductivity. p-Type conductivity was achieved by annealing the AZO:Cu{sub 2}O films in N{sub 2}/H{sub 2} forming gas at 400 °C. The hole concentration, hole mobility and resistivity of the 0.5–2 mol% AZO:Cu{sub 2}O films were 5.41 × 10{sup 18} to 1.99 × 10{sup 20} cm{sup −3}, 8.36–21.6 cm{sup 2}/V s and 1.66 × 10{sup −2} to 6.94 × 10{sup −3} Ω cm, respectively. These results show that post-annealing in a forming gas is effective and practicable in producing p-type AZO.
- OSTI ID:
- 22215777
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 1; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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