Charge collection in irradiated HV-CMOS detectors
Abstract
Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ω cm were irradiated with neutrons and protons up to a fluence of 2 x 1015 neq cm–2 and 3.6 x 1015 neq cm–2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Furthermore, the results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.
- Authors:
-
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- Institute Jozef Stefan, Ljubljana (Slovenia)
- Univ. of California, Santa Cruz, CA (United States)
- Univ. of Oxford (United Kingdom)
- Univ. of Glasgow (United Kingdom)
- Univ. of Geneva (Switzerland)
- Univ. of Liverpool (United Kingdom); European Organization for Nuclear Research (CERN), Geneva (Switzerland)
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Rutherford Appleton Lab, Didcot (United Kingdom)
- Karlsruhe Inst. of Technology (KIT) (Germany)
- Univ. of British Columbia, Vancouver, BC (Canada)
- Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
- Institute of High Energy Physics, Beijing (China)
- Univ. of New Mexico, Albuquerque, NM (United States)
- Cambridge Univ. (United Kingdom)
- Univ. of Oxford (United Kingdom); Univ. of Glasgow (United Kingdom)
- Univ. of Oxford (United Kingdom); Rutherford Appleton Lab, Didcot (United Kingdom)
- Univ. of Liverpool (United Kingdom); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
- Institute Jozef Stefan, Ljubljana (Slovenia); Univ. of Ljubljana (Slovenia)
- Lancaster Univ. (United Kingdom)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Univ. College, London (United Kingdom)
- Univ. of Birmingham (United Kingdom)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1528886
- Grant/Contract Number:
- AC02-76SF00515; P1-0135; PR-06802; 654168
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Additional Journal Information:
- Journal Volume: 924; Journal Issue: C; Journal ID: ISSN 0168-9002
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Active silicon detectors; Charge collection efficiency; LHC upgrade
Citation Formats
Hiti, B., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Doering, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Fedorko, W., Galloway, Z., Gay, C., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Han, Y., Hoeferkamp, M., Hommels, L. B. A., Huffman, T., John, J., Kanisauskas, K., Kenney, C., Kramberger, G., Liang, Z., Mandić, I., Maneuski, D., Martinez-Mckinney, F., McMahon, S., Meng, L., Mikuž, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Ruckman, L., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Stanitzki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., and Zhu, H. Charge collection in irradiated HV-CMOS detectors. United States: N. p., 2018.
Web. doi:10.1016/j.nima.2018.07.022.
Hiti, B., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Doering, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Fedorko, W., Galloway, Z., Gay, C., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Han, Y., Hoeferkamp, M., Hommels, L. B. A., Huffman, T., John, J., Kanisauskas, K., Kenney, C., Kramberger, G., Liang, Z., Mandić, I., Maneuski, D., Martinez-Mckinney, F., McMahon, S., Meng, L., Mikuž, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Ruckman, L., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Stanitzki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., & Zhu, H. Charge collection in irradiated HV-CMOS detectors. United States. https://doi.org/10.1016/j.nima.2018.07.022
Hiti, B., Affolder, A., Arndt, K., Bates, R., Benoit, M., Bello, F. Di, Blue, A., Bortoletto, D., Buckland, M., Buttar, C., Caragiulo, P., Das, D., Doering, D., Dopke, J., Dragone, A., Ehrler, F., Fadeyev, V., Fedorko, W., Galloway, Z., Gay, C., Grabas, H., Gregor, I. M., Grenier, P., Grillo, A., Han, Y., Hoeferkamp, M., Hommels, L. B. A., Huffman, T., John, J., Kanisauskas, K., Kenney, C., Kramberger, G., Liang, Z., Mandić, I., Maneuski, D., Martinez-Mckinney, F., McMahon, S., Meng, L., Mikuž, M., Muenstermann, D., Nickerson, R., Peric, I., Phillips, P., Plackett, R., Rubbo, F., Ruckman, L., Segal, J., Seidel, S., Seiden, A., Shipsey, I., Song, W., Stanitzki, M., Su, D., Tamma, C., Turchetta, R., Vigani, L., Volk, J., Wang, R., Warren, M., Wilson, F., Worm, S., Xiu, Q., Zhang, J., and Zhu, H. Mon .
"Charge collection in irradiated HV-CMOS detectors". United States. https://doi.org/10.1016/j.nima.2018.07.022. https://www.osti.gov/servlets/purl/1528886.
@article{osti_1528886,
title = {Charge collection in irradiated HV-CMOS detectors},
author = {Hiti, B. and Affolder, A. and Arndt, K. and Bates, R. and Benoit, M. and Bello, F. Di and Blue, A. and Bortoletto, D. and Buckland, M. and Buttar, C. and Caragiulo, P. and Das, D. and Doering, D. and Dopke, J. and Dragone, A. and Ehrler, F. and Fadeyev, V. and Fedorko, W. and Galloway, Z. and Gay, C. and Grabas, H. and Gregor, I. M. and Grenier, P. and Grillo, A. and Han, Y. and Hoeferkamp, M. and Hommels, L. B. A. and Huffman, T. and John, J. and Kanisauskas, K. and Kenney, C. and Kramberger, G. and Liang, Z. and Mandić, I. and Maneuski, D. and Martinez-Mckinney, F. and McMahon, S. and Meng, L. and Mikuž, M. and Muenstermann, D. and Nickerson, R. and Peric, I. and Phillips, P. and Plackett, R. and Rubbo, F. and Ruckman, L. and Segal, J. and Seidel, S. and Seiden, A. and Shipsey, I. and Song, W. and Stanitzki, M. and Su, D. and Tamma, C. and Turchetta, R. and Vigani, L. and Volk, J. and Wang, R. and Warren, M. and Wilson, F. and Worm, S. and Xiu, Q. and Zhang, J. and Zhu, H.},
abstractNote = {Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ω cm were irradiated with neutrons and protons up to a fluence of 2 x 1015 neq cm–2 and 3.6 x 1015 neq cm–2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Furthermore, the results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.},
doi = {10.1016/j.nima.2018.07.022},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = C,
volume = 924,
place = {United States},
year = {Mon Jul 23 00:00:00 EDT 2018},
month = {Mon Jul 23 00:00:00 EDT 2018}
}
Web of Science
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