Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors

Zhang, Zheyu; Lu, Haifeng; Costinett, Daniel J.; Wang, Fred; Tolbert, Leon M.; Blalock, Benjamin J.

doi:10.1109/TPEL.2016.2645578

Title: Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors

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Abstract

Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition and load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).

Authors:

Zhang, Zheyu ^[1]; Lu, Haifeng ^[2]; Costinett, Daniel J. ^[1]; Wang, Fred ^[1]; Tolbert, Leon M. ^[1]; Blalock, Benjamin J. ^[1]

The Univ. of Tennessee, Knoxville, TN (United States)
Tsinghua Univ., Beijing (China)

Publication Date:: Thu Dec 29 00:00:00 EST 2016

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1399115

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Power Electronics

Additional Journal Information:: Journal Volume: 32; Journal Issue: 11; Journal ID: ISSN 0885-8993

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 30 DIRECT ENERGY CONVERSION; condition monitoring; dead time; model-based operation; silicon carbide (SiC); voltage-source converter (VSC)

Citation Formats


                    Zhang, Zheyu, Lu, Haifeng, Costinett, Daniel J., Wang, Fred, Tolbert, Leon M., and Blalock, Benjamin J. Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors.  United States: N. p., 2016. 
Web.  doi:10.1109/TPEL.2016.2645578.

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                    Zhang, Zheyu, Lu, Haifeng, Costinett, Daniel J., Wang, Fred, Tolbert, Leon M., & Blalock, Benjamin J. Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors.  United States.  https://doi.org/10.1109/TPEL.2016.2645578

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                    Zhang, Zheyu, Lu, Haifeng, Costinett, Daniel J., Wang, Fred, Tolbert, Leon M., and Blalock, Benjamin J. Thu .  
"Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors".  United States.  https://doi.org/10.1109/TPEL.2016.2645578.  https://www.osti.gov/servlets/purl/1399115.

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@article{osti_1399115,

  title        = {Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors},

  author       = {Zhang, Zheyu and Lu, Haifeng and Costinett, Daniel J. and Wang, Fred and Tolbert, Leon M. and Blalock, Benjamin J.},

  abstractNote = {Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition and load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).},

  doi          = {10.1109/TPEL.2016.2645578},

  journal      = {IEEE Transactions on Power Electronics},

  number       = 11,

  volume       = 32,

  place        = {United States},

  year         = {Thu Dec 29 00:00:00 EST 2016},

  month        = {Thu Dec 29 00:00:00 EST 2016}

}

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