Dead-time optimization for SiC based voltage source converters using online condition monitoring
Abstract
This paper introduces a dead-time optimization technique for a 2-level voltage source converter (VSC) using turn-off transition monitoring. Dead-time in a VSC impacts power quality, reliability, and efficiency. Silicon carbide (SiC) based VSCs are more sensitive to dead-time from increased reverse conduction losses and turn-off time variability with operating conditions and load characteristics. An online condition monitoring system for SiC devices has been developed using gate drive assist circuits and a micro-controller. It can be leveraged to monitor turn-off time and indicate the optimal dead-time in each switching cycle of any converter operation. It can also be used to specify load current polarity, which is needed for dead-time optimization in an inverter. This is an important distinction from other inverter dead-time elimination/optimization schemes as current around the zero current crossing is hard to accurately detect. A 1kW half-bridge inverter was assembled to test the turn-off time monitoring and dead-time optimization scheme. Results show 91% reduction in reverse conduction power losses in the SiC devices compared to a set dead-time of 500ns switching at 50 kHz.
- Authors:
-
- The University of Tennessee, Knoxville
- ORNL
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1468923
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Conference
- Resource Relation:
- Conference: IEEE Workshop on Wide Bandgap Devices and Applications - Albuquerque, New Mexico, United States of America - 11/1/2017 4:00:00 AM-11/3/2017 4:00:00 AM
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Dyer, Jacob, Zhang, Zheyu, Wang, Fei, Costinett, Daniel J., Tolbert, Leon M., and Blalock, Benjamin J. Dead-time optimization for SiC based voltage source converters using online condition monitoring. United States: N. p., 2017.
Web. doi:10.1109/WiPDA.2017.8170495.
Dyer, Jacob, Zhang, Zheyu, Wang, Fei, Costinett, Daniel J., Tolbert, Leon M., & Blalock, Benjamin J. Dead-time optimization for SiC based voltage source converters using online condition monitoring. United States. https://doi.org/10.1109/WiPDA.2017.8170495
Dyer, Jacob, Zhang, Zheyu, Wang, Fei, Costinett, Daniel J., Tolbert, Leon M., and Blalock, Benjamin J. Wed .
"Dead-time optimization for SiC based voltage source converters using online condition monitoring". United States. https://doi.org/10.1109/WiPDA.2017.8170495. https://www.osti.gov/servlets/purl/1468923.
@article{osti_1468923,
title = {Dead-time optimization for SiC based voltage source converters using online condition monitoring},
author = {Dyer, Jacob and Zhang, Zheyu and Wang, Fei and Costinett, Daniel J. and Tolbert, Leon M. and Blalock, Benjamin J.},
abstractNote = {This paper introduces a dead-time optimization technique for a 2-level voltage source converter (VSC) using turn-off transition monitoring. Dead-time in a VSC impacts power quality, reliability, and efficiency. Silicon carbide (SiC) based VSCs are more sensitive to dead-time from increased reverse conduction losses and turn-off time variability with operating conditions and load characteristics. An online condition monitoring system for SiC devices has been developed using gate drive assist circuits and a micro-controller. It can be leveraged to monitor turn-off time and indicate the optimal dead-time in each switching cycle of any converter operation. It can also be used to specify load current polarity, which is needed for dead-time optimization in an inverter. This is an important distinction from other inverter dead-time elimination/optimization schemes as current around the zero current crossing is hard to accurately detect. A 1kW half-bridge inverter was assembled to test the turn-off time monitoring and dead-time optimization scheme. Results show 91% reduction in reverse conduction power losses in the SiC devices compared to a set dead-time of 500ns switching at 50 kHz.},
doi = {10.1109/WiPDA.2017.8170495},
url = {https://www.osti.gov/biblio/1468923},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {11}
}