Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide
Abstract
Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1371811
- Alternate Identifier(s):
- OSTI ID: 1369305; OSTI ID: 1371812
- Report Number(s):
- SAND-2017-6855J
Journal ID: ISSN 1943-0655; 7970105
- Grant/Contract Number:
- NA0003525; AC04-94AL85000
- Resource Type:
- Published Article
- Journal Name:
- IEEE Photonics Journal (Online)
- Additional Journal Information:
- Journal Name: IEEE Photonics Journal (Online) Journal Volume: 9 Journal Issue: 4; Journal ID: ISSN 1943-0655
- Publisher:
- IEEE
- Country of Publication:
- France
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; epsilon-near-zero; sub-micrometer electroabsorption modulator; transparent conducting oxides; near-infrared; high-mobility materials; cadmium oxide
Citation Formats
Campione, Salvatore, Wood, Michael G., Serkland, Darwin K., Parameswaran, S., Ihlefeld, Jon, Luk, T. S., Wendt, Joel R., Geib, Kent M., and Keeler, Gordon A. Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide. France: N. p., 2017.
Web. doi:10.1109/JPHOT.2017.2723299.
Campione, Salvatore, Wood, Michael G., Serkland, Darwin K., Parameswaran, S., Ihlefeld, Jon, Luk, T. S., Wendt, Joel R., Geib, Kent M., & Keeler, Gordon A. Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide. France. https://doi.org/10.1109/JPHOT.2017.2723299
Campione, Salvatore, Wood, Michael G., Serkland, Darwin K., Parameswaran, S., Ihlefeld, Jon, Luk, T. S., Wendt, Joel R., Geib, Kent M., and Keeler, Gordon A. Thu .
"Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide". France. https://doi.org/10.1109/JPHOT.2017.2723299.
@article{osti_1371811,
title = {Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide},
author = {Campione, Salvatore and Wood, Michael G. and Serkland, Darwin K. and Parameswaran, S. and Ihlefeld, Jon and Luk, T. S. and Wendt, Joel R. and Geib, Kent M. and Keeler, Gordon A.},
abstractNote = {Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.},
doi = {10.1109/JPHOT.2017.2723299},
journal = {IEEE Photonics Journal (Online)},
number = 4,
volume = 9,
place = {France},
year = {Thu Jul 06 00:00:00 EDT 2017},
month = {Thu Jul 06 00:00:00 EDT 2017}
}
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