Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide
Abstract
Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.
- Authors:
-
[1];
[2];
[1];
[1];
[3];
[4];
[1];
[3]
- Birck Nanotechnology Center, West Lafayette, IN (United States); Purdue Univ., West Lafayette, IN (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States); Northwestern Univ., Evanston, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1631964
- Alternate Identifier(s):
- OSTI ID: 1579422; OSTI ID: 1595422
- Report Number(s):
- SAND-2019-15308J
Journal ID: ISSN 1616-301X; 157860
- Grant/Contract Number:
- AC02-06CH11357; NA‐0003525; AC02‐06CH11357; SC0017717; AC04-94AL85000; FA9550‐18‐1‐0002
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 30; Journal Issue: 7; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; all optical switching; cadmium oxide; epsilon near zero; high mobility transparent conducting oxide; mid infrared plasmonics
Citation Formats
Saha, Soham, Diroll, Benjamin T., Shank, Joshua, Kudyshev, Zhaxylyk, Dutta, Aveek, Chowdhury, Sarah Nahar, Luk, Ting Shan, Campione, Salvatore, Schaller, Richard D., Shalaev, Vladimir M., Boltasseva, Alexandra, and Wood, Michael G. Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide. United States: N. p., 2019.
Web. doi:10.1002/adfm.201908377.
Saha, Soham, Diroll, Benjamin T., Shank, Joshua, Kudyshev, Zhaxylyk, Dutta, Aveek, Chowdhury, Sarah Nahar, Luk, Ting Shan, Campione, Salvatore, Schaller, Richard D., Shalaev, Vladimir M., Boltasseva, Alexandra, & Wood, Michael G. Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide. United States. https://doi.org/10.1002/adfm.201908377
Saha, Soham, Diroll, Benjamin T., Shank, Joshua, Kudyshev, Zhaxylyk, Dutta, Aveek, Chowdhury, Sarah Nahar, Luk, Ting Shan, Campione, Salvatore, Schaller, Richard D., Shalaev, Vladimir M., Boltasseva, Alexandra, and Wood, Michael G. Fri .
"Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide". United States. https://doi.org/10.1002/adfm.201908377. https://www.osti.gov/servlets/purl/1631964.
@article{osti_1631964,
title = {Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide},
author = {Saha, Soham and Diroll, Benjamin T. and Shank, Joshua and Kudyshev, Zhaxylyk and Dutta, Aveek and Chowdhury, Sarah Nahar and Luk, Ting Shan and Campione, Salvatore and Schaller, Richard D. and Shalaev, Vladimir M. and Boltasseva, Alexandra and Wood, Michael G.},
abstractNote = {Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.},
doi = {10.1002/adfm.201908377},
journal = {Advanced Functional Materials},
number = 7,
volume = 30,
place = {United States},
year = {Fri Dec 13 00:00:00 EST 2019},
month = {Fri Dec 13 00:00:00 EST 2019}
}
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