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Title: Gigahertz speed operation of epsilon-near-zero silicon photonic modulators

Abstract

Optical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 V p p , we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.

Authors:
ORCiD logo; ORCiD logo; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); SNL Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1421586
Alternate Identifier(s):
OSTI ID: 1432341
Report Number(s):
SAND2018-0422J
Journal ID: ISSN 2334-2536
Grant/Contract Number:  
NA0003525
Resource Type:
Published Article
Journal Name:
Optica
Additional Journal Information:
Journal Name: Optica Journal Volume: 5 Journal Issue: 3; Journal ID: ISSN 2334-2536
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 47 OTHER INSTRUMENTATION; integrated optics devices; modulators; transparent conductive coatings; atomic layer deposition; electron beam lithography; electrooptical modulators; photonic crystal cavities; thin films; wavelength division multiplexing

Citation Formats

Wood, Michael G., Campione, Salvatore, Parameswaran, S., Luk, Ting S., Wendt, Joel R., Serkland, Darwin K., and Keeler, Gordon A. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators. United States: N. p., 2018. Web. doi:10.1364/OPTICA.5.000233.
Wood, Michael G., Campione, Salvatore, Parameswaran, S., Luk, Ting S., Wendt, Joel R., Serkland, Darwin K., & Keeler, Gordon A. Gigahertz speed operation of epsilon-near-zero silicon photonic modulators. United States. doi:10.1364/OPTICA.5.000233.
Wood, Michael G., Campione, Salvatore, Parameswaran, S., Luk, Ting S., Wendt, Joel R., Serkland, Darwin K., and Keeler, Gordon A. Wed . "Gigahertz speed operation of epsilon-near-zero silicon photonic modulators". United States. doi:10.1364/OPTICA.5.000233.
@article{osti_1421586,
title = {Gigahertz speed operation of epsilon-near-zero silicon photonic modulators},
author = {Wood, Michael G. and Campione, Salvatore and Parameswaran, S. and Luk, Ting S. and Wendt, Joel R. and Serkland, Darwin K. and Keeler, Gordon A.},
abstractNote = {Optical communication systems increasingly require electro-optical modulators that deliver high modulation speeds across a large optical bandwidth with a small device footprint and a CMOS-compatible fabrication process. Although silicon photonic modulators based on transparent conducting oxides (TCOs) have shown promise for delivering on these requirements, modulation speeds to date have been limited. Here, we describe the design, fabrication, and performance of a fast, compact electroabsorption modulator based on TCOs. The modulator works by using bias voltage to increase the carrier density in the conducting oxide, which changes the permittivity and hence optical attenuation by almost 10 dB. Under bias, light is tightly confined to the conducting oxide layer through nonresonant epsilon-near-zero (ENZ) effects, which enable modulation over a broad range of wavelengths in the telecommunications band. Our approach features simple integration with passive silicon waveguides, the use of stable inorganic materials, and the ability to modulate both transverse electric and magnetic polarizations with the same device design. Using a 4-μm-long modulator and a drive voltage of 2 Vpp, we demonstrate digital modulation at rates of 2.5 Gb/s. We report broadband operation with a 6.5 dB extinction ratio across the 1530–1590 nm band and a 10 dB insertion loss. This work verifies that high-speed ENZ devices can be created using conducting oxide materials and paves the way for additional technology development that could have a broad impact on future optical communications systems.},
doi = {10.1364/OPTICA.5.000233},
journal = {Optica},
number = 3,
volume = 5,
place = {United States},
year = {2018},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OPTICA.5.000233

Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

Figures / Tables:

Fig. 1 Fig. 1: Schematics of the ENZ modulator. (a) Perspective view of the modulator, with a cut-away view of the layers in the active region. (b) Cross-sectional view of the modulator. Upon application of a bias voltage, an accumulation layer possessing ENZ behavior near 1.55 μm is formed (white dashed line).more » Note that the implanted silicon would normally be considered the “gate metal”, but we are calling the TCO “semiconductor” contact the gate metal. Hence voltage polarities will be reversed for accumulation and depletion modes.« less

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Works referenced in this record:

Digital Plasmonic Absorption Modulator Exploiting Epsilon-Near-Zero in Transparent Conducting Oxides
journal, February 2016


Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO_2/ITO/Cu stack for CMOS backend integration
journal, January 2014


Field-effect optical modulation based on epsilon-near-zero conductive oxide
journal, July 2016


Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars
journal, June 2009


40 Gbit/s silicon optical modulator for high-speed applications
journal, January 2007


Ultra-compact silicon nanophotonic modulator with broadband response
journal, January 2012

  • Sorger, Volker J.; Lanzillotti-Kimura, Norberto D.; Ma, Ren-Min
  • Nanophotonics, Vol. 1, Issue 1
  • DOI: 10.1515/nanoph-2012-0009

Silicon optical modulators
journal, July 2010


Tunneling of Electromagnetic Energy through Subwavelength Channels and Bends using ε -Near-Zero Materials
journal, October 2006


10 Gb/s operation of photonic crystal silicon optical modulators
journal, January 2011

  • Nguyen, Hong C.; Sakai, Yuya; Shinkawa, Mizuki
  • Optics Express, Vol. 19, Issue 14
  • DOI: 10.1364/OE.19.013000

High-speed plasmonic phase modulators
journal, February 2014


The plasmonic memristor: a latching optical switch
journal, January 2014


Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide
journal, August 2017

  • Campione, Salvatore; Wood, Michael G.; Serkland, Darwin K.
  • IEEE Photonics Journal, Vol. 9, Issue 4
  • DOI: 10.1109/JPHOT.2017.2723299

An ultralow power athermal silicon modulator
journal, June 2014

  • Timurdogan, Erman; Sorace-Agaskar, Cheryl M.; Sun, Jie
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5008

Precise measurements of oxygen content: Oxygen vacancies in transparent conducting indium oxide films
journal, June 1991

  • Bellingham, J. R.; Mackenzie, A. P.; Phillips, W. A.
  • Applied Physics Letters, Vol. 58, Issue 22
  • DOI: 10.1063/1.104858

Femtosecond optical polarization switching using a cadmium oxide-based perfect absorber
journal, May 2017


7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators
journal, January 2016

  • Wood, Michael G.; Burr, Justin R.; Reano, Ronald M.
  • Optics Express, Vol. 24, Issue 20
  • DOI: 10.1364/OE.24.023481

Nanoscale Conducting Oxide PlasMOStor
journal, October 2014

  • Lee, Ho W.; Papadakis, Georgia; Burgos, Stanley P.
  • Nano Letters, Vol. 14, Issue 11, p. 6463-6468
  • DOI: 10.1021/nl502998z

Compensating thermal drift of hybrid silicon and lithium niobate ring resonances
journal, January 2015

  • Chen, Li; Wood, Michael G.; Reano, Ronald M.
  • Optics Letters, Vol. 40, Issue 7
  • DOI: 10.1364/OL.40.001599

Electrically Controlled Plasmonic Switches and Modulators
journal, July 2015

  • Emboras, Alexandros; Hoessbacher, Claudia; Haffner, Christian
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 4
  • DOI: 10.1109/JSTQE.2014.2382293

Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator
journal, January 2009


Alternative Plasmonic Materials: Beyond Gold and Silver
journal, May 2013

  • Naik, Gururaj V.; Shalaev, Vladimir M.; Boltasseva, Alexandra
  • Advanced Materials, Vol. 25, Issue 24
  • DOI: 10.1002/adma.201205076

Electric field enhancement in ɛ-near-zero slabs under TM-polarized oblique incidence
journal, January 2013

  • Campione, Salvatore; de Ceglia, Domenico; Vincenti, Maria Antonietta
  • Physical Review B, Vol. 87, Issue 3, Article No. 035120
  • DOI: 10.1103/PhysRevB.87.035120

    Works referencing / citing this record:

    Nonlinear optical effects in epsilon-near-zero media
    journal, June 2019


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