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Title: Oxygen-modulated quantum conductance for ultrathin HfO 2 -based memristive switching devices

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent noninteger conductance (in terms of conductance quantum G 0). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO 2-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. In conclusion, our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. National Physical Lab., Teddington (United Kingdom)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Northwestern-Argonne Inst. for Science and Engineering
Publication Date:
Grant/Contract Number:
AC02-06CH11357; 688282
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); European Union (EU)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION
OSTI Identifier:
1352621
Alternate Identifier(s):
OSTI ID: 1329951