Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures
Abstract
From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Furthermore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Texas State Univ., San Marcos, TX (United States)
- Colorado School of Mines, Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1349803
- Alternate Identifier(s):
- OSTI ID: 1348947
- Report Number(s):
- NREL/JA-5900-67479
Journal ID: ISSN 0003-6951; TRN: US1700704
- Grant/Contract Number:
- AC36-08GO28308; AC36-08-GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence; second harmonic generation; heterojunctions; solar cells; charge carriers
Citation Formats
Kuciauskas, Darius, Myers, Thomas H., Barnes, Teresa M., Jensen, Søren A., and Allende Motz, Alyssa M. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures. United States: N. p., 2017.
Web. doi:10.1063/1.4976696.
Kuciauskas, Darius, Myers, Thomas H., Barnes, Teresa M., Jensen, Søren A., & Allende Motz, Alyssa M. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures. United States. https://doi.org/10.1063/1.4976696
Kuciauskas, Darius, Myers, Thomas H., Barnes, Teresa M., Jensen, Søren A., and Allende Motz, Alyssa M. Mon .
"Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures". United States. https://doi.org/10.1063/1.4976696. https://www.osti.gov/servlets/purl/1349803.
@article{osti_1349803,
title = {Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures},
author = {Kuciauskas, Darius and Myers, Thomas H. and Barnes, Teresa M. and Jensen, Søren A. and Allende Motz, Alyssa M.},
abstractNote = {From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Furthermore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.},
doi = {10.1063/1.4976696},
journal = {Applied Physics Letters},
number = 8,
volume = 110,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}
Web of Science
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Works referencing / citing this record:
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