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Title: Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Abstract

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

Authors:
 [1];  [2]; ; ;  [3]; ; ; ; ; ; ; ;  [4]
  1. Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States)
  2. (United States)
  3. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  4. Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666 (United States)
Publication Date:
OSTI Identifier:
22590495
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 109; Journal Issue: 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; CHARGE CARRIERS; CRYSTALLOGRAPHY; DIFFUSION LENGTH; DISLOCATIONS; EMISSION SPECTROSCOPY; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHONONS; PHOTOLUMINESCENCE; RECOMBINATION; TIME RESOLUTION

Citation Formats

Zaunbrecher, Katherine N., National Renewable Energy Laboratory, Golden, Colorado 80401, Kuciauskas, Darius, Dippo, Pat, Barnes, Teresa M., Swartz, Craig H., Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., and Myers, Thomas H. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4961989.
Zaunbrecher, Katherine N., National Renewable Energy Laboratory, Golden, Colorado 80401, Kuciauskas, Darius, Dippo, Pat, Barnes, Teresa M., Swartz, Craig H., Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., & Myers, Thomas H. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy. United States. doi:10.1063/1.4961989.
Zaunbrecher, Katherine N., National Renewable Energy Laboratory, Golden, Colorado 80401, Kuciauskas, Darius, Dippo, Pat, Barnes, Teresa M., Swartz, Craig H., Edirisooriya, Madhavie, Ogedengbe, Olanrewaju S., Sohal, Sandeep, Hancock, Bobby L., LeBlanc, Elizabeth G., Jayathilaka, Pathiraja A. R. D., and Myers, Thomas H. Mon . "Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy". United States. doi:10.1063/1.4961989.
@article{osti_22590495,
title = {Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy},
author = {Zaunbrecher, Katherine N. and National Renewable Energy Laboratory, Golden, Colorado 80401 and Kuciauskas, Darius and Dippo, Pat and Barnes, Teresa M. and Swartz, Craig H. and Edirisooriya, Madhavie and Ogedengbe, Olanrewaju S. and Sohal, Sandeep and Hancock, Bobby L. and LeBlanc, Elizabeth G. and Jayathilaka, Pathiraja A. R. D. and Myers, Thomas H.},
abstractNote = {Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.},
doi = {10.1063/1.4961989},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = {Mon Aug 29 00:00:00 EDT 2016},
month = {Mon Aug 29 00:00:00 EDT 2016}
}