Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

Kuciauskas, Darius; Wernsing, Keith; Jensen, Soren Alkaersig; Barnes, Teresa M.; Myers, Thomas H.; Bartels, Randy A.

doi:10.1109/JPHOTOV.2016.2600342

Title: Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy

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Abstract

Here, we used time-resolved photoluminescence microscopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm²/(V s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.

Authors:

Kuciauskas, Darius ^[1]; Wernsing, Keith ^[2]; Jensen, Soren Alkaersig ^[1]; Barnes, Teresa M. ^[1]; Myers, Thomas H. ^[3]; Bartels, Randy A. ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Colorado State Univ., Fort Collins, CO (United States)
Texas State Univ., San Marcos, TX (United States)

Publication Date:: Tue Nov 01 00:00:00 EDT 2016

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1330947

Report Number(s):: NREL/JA-5900-66373
Journal ID: ISSN 2156-3381

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Journal of Photovoltaics

Additional Journal Information:: Journal Volume: 6; Journal Issue: 6; Journal ID: ISSN 2156-3381

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cadmium telluride; PV device; recombination; photoluminescence

Citation Formats


                    Kuciauskas, Darius, Wernsing, Keith, Jensen, Soren Alkaersig, Barnes, Teresa M., Myers, Thomas H., and Bartels, Randy A. Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy.  United States: N. p., 2016. 
Web.  doi:10.1109/JPHOTOV.2016.2600342.

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                    Kuciauskas, Darius, Wernsing, Keith, Jensen, Soren Alkaersig, Barnes, Teresa M., Myers, Thomas H., & Bartels, Randy A. Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy.  United States.  https://doi.org/10.1109/JPHOTOV.2016.2600342

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                    Kuciauskas, Darius, Wernsing, Keith, Jensen, Soren Alkaersig, Barnes, Teresa M., Myers, Thomas H., and Bartels, Randy A. Tue .  
"Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy".  United States.  https://doi.org/10.1109/JPHOTOV.2016.2600342.  https://www.osti.gov/servlets/purl/1330947.

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@article{osti_1330947,

  title        = {Analysis of Recombination in CdTe Heterostructures With Time-Resolved Two-Photon Excitation Microscopy},

  author       = {Kuciauskas, Darius and Wernsing, Keith and Jensen, Soren Alkaersig and Barnes, Teresa M. and Myers, Thomas H. and Bartels, Randy A.},

  abstractNote = {Here, we used time-resolved photoluminescence microscopy to analyze charge carrier transport and recombination in CdTe double heterostructures fabricated by molecular beam epitaxy (MBE). This allowed us to determine the charge carrier mobility in this system, which was found to be 500-625 cm2/(V s). Charge carrier lifetimes in the 15-100 ns range are limited by the interface recombination, and the data indicate higher interface recombination velocity near extended defects. This study describes a new method to analyze the spatial distribution of the interface recombination velocity and the interface defects in semiconductor heterostructures.},

  doi          = {10.1109/JPHOTOV.2016.2600342},

  journal      = {IEEE Journal of Photovoltaics},

  number       = 6,

  volume       = 6,

  place        = {United States},

  year         = {Tue Nov 01 00:00:00 EDT 2016},

  month        = {Tue Nov 01 00:00:00 EDT 2016}

}

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