DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

Abstract

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10–12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1326061
Report Number(s):
SAND-2016-8357J
Journal ID: ISSN 1094-4087; OPEXFF; 647399
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 17; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; integrated optics; integrated optics devices; detectors; photodiodes

Citation Formats

Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., and Davids, Paul S. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. United States: N. p., 2016. Web. doi:10.1364/OE.24.019072.
Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., & Davids, Paul S. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes. United States. https://doi.org/10.1364/OE.24.019072
Martinez, Nicholas J. D., Derose, Christopher T., Brock, Reinhard W., Starbuck, Andrew L., Pomerene, Andrew T., Lentine, Anthony L., Trotter, Douglas C., and Davids, Paul S. Tue . "High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes". United States. https://doi.org/10.1364/OE.24.019072. https://www.osti.gov/servlets/purl/1326061.
@article{osti_1326061,
title = {High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes},
author = {Martinez, Nicholas J. D. and Derose, Christopher T. and Brock, Reinhard W. and Starbuck, Andrew L. and Pomerene, Andrew T. and Lentine, Anthony L. and Trotter, Douglas C. and Davids, Paul S.},
abstractNote = {Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10–12, in the range from –18.3 dBm to –12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.},
doi = {10.1364/OE.24.019072},
journal = {Optics Express},
number = 17,
volume = 24,
place = {United States},
year = {Tue Aug 09 00:00:00 EDT 2016},
month = {Tue Aug 09 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 42 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
journal, March 2010

  • Assefa, Solomon; Xia, Fengnian; Vlasov, Yurii A.
  • Nature, Vol. 464, Issue 7285
  • DOI: 10.1038/nature08813

The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy
journal, May 1998


Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors
journal, November 2007

  • Colace, Lorenzo; Ferrara, Pasquale; Assanto, Gaetano
  • IEEE Photonics Technology Letters, Vol. 19, Issue 22
  • DOI: 10.1109/LPT.2007.907578

High-performance Ge-on-Si photodetectors
journal, July 2010


Photonic quantum technologies
journal, December 2009

  • O'Brien, Jeremy L.; Furusawa, Akira; Vučković, Jelena
  • Nature Photonics, Vol. 3, Issue 12
  • DOI: 10.1038/nphoton.2009.229

Adiabatic thermo-optic Mach–Zehnder switch
journal, January 2013

  • Watts, Michael R.; Sun, Jie; DeRose, Christopher
  • Optics Letters, Vol. 38, Issue 5, p. 733-735
  • DOI: 10.1364/OL.38.000733

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
journal, January 2005

  • Lee, Minjoo L.; Fitzgerald, Eugene A.; Bulsara, Mayank T.
  • Journal of Applied Physics, Vol. 97, Issue 1
  • DOI: 10.1063/1.1819976

Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
journal, November 2013

  • Warburton, Ryan E.; Intermite, Giuseppe; Myronov, Maksym
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 11
  • DOI: 10.1109/TED.2013.2282712

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current
journal, January 2011

  • DeRose, Christopher T.; Trotter, Douglas C.; Zortman, William A.
  • Optics Express, Vol. 19, Issue 25, p. 24897-24904
  • DOI: 10.1364/OE.19.024897

High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration
journal, June 2001

  • Masini, C.; Calace, L.; Assanto, G.
  • IEEE Transactions on Electron Devices, Vol. 48, Issue 6
  • DOI: 10.1109/16.925232

Ge-on-Si approaches to the detection of near-infrared light
journal, January 1999

  • Colace, L.; Masini, G.; Assanto, G.
  • IEEE Journal of Quantum Electronics, Vol. 35, Issue 12
  • DOI: 10.1109/3.806596

310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection
journal, January 2012

  • Duan, Ning; Liow, Tsung-Yang; Lim, Andy Eu-Jin
  • Optics Express, Vol. 20, Issue 10
  • DOI: 10.1364/OE.20.011031

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector
journal, January 2015


Challenges in the implementation of dense wavelength division multiplexed (DWDM) optical interconnects using resonant silicon photonics
conference, February 2016

  • Lentine, Anthony L.; DeRose, Christopher T.
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2217429

High-quality Ge epilayers on Si with low threading-dislocation densities
journal, November 1999

  • Luan, Hsin-Chiao; Lim, Desmond R.; Lee, Kevin K.
  • Applied Physics Letters, Vol. 75, Issue 19
  • DOI: 10.1063/1.125187

Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product
journal, December 2008


Ge growth on Si using atomic hydrogen as a surfactant
journal, January 1994

  • Sakai, Akira; Tatsumi, Toru
  • Applied Physics Letters, Vol. 64, Issue 1
  • DOI: 10.1063/1.110919

Device Requirements for Optical Interconnects to Silicon Chips
journal, July 2009


(Invited) Ge/Si Waveguide Avalanche Photodiodes on SOI Substrates for High Speed Communication
journal, October 2010

  • Kang, Yimin; Saado, Yuval; Morse, Mike
  • ECS Transactions, Vol. 33, Issue 6
  • DOI: 10.1149/1.3487606

Works referencing / citing this record:

High performance planar germanium-on-silicon single-photon avalanche diode detectors
journal, March 2019


High-efficiency grating-couplers: demonstration of a new design strategy
journal, November 2017


Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode
journal, January 2017

  • Martinez, Nicholas J. D.; Gehl, Michael; Derose, Christopher T.
  • Optics Express, Vol. 25, Issue 14
  • DOI: 10.1364/oe.25.016130

Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate
journal, January 2018

  • Kang, Jian; Takagi, Shinichi; Takenaka, Mitsuru
  • Optics Express, Vol. 26, Issue 23
  • DOI: 10.1364/oe.26.030546

Impact of longitudinal chromatic aberration on through-focus visual acuity
journal, January 2019

  • Suchkov, Nikolai; Fernández, Enrique J.; Artal, Pablo
  • Optics Express, Vol. 27, Issue 24
  • DOI: 10.1364/oe.27.035935

Silicon–germanium avalanche photodiodes with direct control of electric field in charge multiplication region
journal, January 2019