Multiplication noise of Al{sub x}Ga{sub 1{minus}x}As avalanche photodiodes with high Al concentration and thin multiplication region
We report that homojunction Al{sub x}Ga{sub 1{minus}x}As avalanche photodiodes (APDs) exhibit very low multiplication noise when the Al content is {ge}80%. It was also found that, due to nonlocal effects, the multiplication noise decreased as the ionization region thickness was reduced from 0.8 {mu}m to {le}0.2 {mu}m for Al ratios (from 0 to 0.9). The excess noise factor of the thin (140 nm) Al{sub 0.9}Ga{sub 0.1}As APDs is the lowest reported to date for III{endash}V compounds and is comparable to that of Si avalanche photodiodes. {copyright} 2001 American Institute of Physics.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204298
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 24; Other Information: DOI: 10.1063/1.1343851; Othernumber: APPLAB000078000024003833000001; 045105APL; PBD: 11 Jun 2001; ISSN 0003-6951
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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