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Title: 32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

Abstract

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Authors:
; ; ; ; ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1811360
Grant/Contract Number:  
AR0001039
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Optics Letters
Additional Journal Information:
Journal Name: Optics Letters Journal Volume: 46 Journal Issue: 16; Journal ID: ISSN 0146-9592
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Tossoun, Bassem, Kurczveil, Geza, Srinivasan, Sudharsanan, Descos, Antoine, Liang, Di, and Beausoleil, Raymond G. 32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon. United States: N. p., 2021. Web. doi:10.1364/OL.433654.
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Tossoun, Bassem, Kurczveil, Geza, Srinivasan, Sudharsanan, Descos, Antoine, Liang, Di, & Beausoleil, Raymond G. 32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon. United States. https://doi.org/10.1364/OL.433654
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Tossoun, Bassem, Kurczveil, Geza, Srinivasan, Sudharsanan, Descos, Antoine, Liang, Di, and Beausoleil, Raymond G. Mon . "32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon". United States. https://doi.org/10.1364/OL.433654.
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@article{osti_1811360,
title = {32  Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon},
author = {Tossoun, Bassem and Kurczveil, Geza and Srinivasan, Sudharsanan and Descos, Antoine and Liang, Di and Beausoleil, Raymond G.},
abstractNote = {We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.},
doi = {10.1364/OL.433654},
journal = {Optics Letters},
number = 16,
volume = 46,
place = {United States},
year = {Mon Aug 02 00:00:00 EDT 2021},
month = {Mon Aug 02 00:00:00 EDT 2021}
}
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https://doi.org/10.1364/OL.433654
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