Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

Journal Article · Mon Dec 10 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2817608· OSTI ID:21016208

Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph ^[1]

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1. Laboratory for Photonics and Magnetics, ECE Department, University of Illinois, 851 S. Morgan Street, Chicago, Illinois 60607 (United States)

Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p{sup +}-n{sup -}-n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics.

• OSTI ID: 21016208
• Journal Information: Applied Physics Letters, Vol. 91, Issue 24; Other Information: DOI: 10.1063/1.2817608; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CRYSTAL GROWTH
ELECTRONS
GALLIUM ANTIMONIDES
HOMOJUNCTIONS
INDIUM ARSENIDES
IONIZATION
LAYERS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTODIODES
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K