Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

Abstract

In some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. Here, we show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. Our work demonstrates that BiI3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.

Authors:
ORCiD logo [1];  [1];  [1]
+ Show Author Affiliations
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Nonproliferation and Verification Research and Development (NA-22); USDOE
OSTI Identifier:
1366970
Alternate Identifier(s):
OSTI ID: 1315848
Grant/Contract Number:  
NA0002534; NE0000730
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Johns, Paul M., Baciak, James E., and Nino, Juan C. Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control. United States: N. p., 2016. Web. doi:10.1063/1.4962293.
Copy to clipboard
Johns, Paul M., Baciak, James E., & Nino, Juan C. Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control. United States. https://doi.org/10.1063/1.4962293
Copy to clipboard
Johns, Paul M., Baciak, James E., and Nino, Juan C. Fri . "Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control". United States. https://doi.org/10.1063/1.4962293. https://www.osti.gov/servlets/purl/1366970.
Copy to clipboard
@article{osti_1366970,
title = {Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control},
author = {Johns, Paul M. and Baciak, James E. and Nino, Juan C.},
abstractNote = {In some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. Here, we show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. Our work demonstrates that BiI3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.},
doi = {10.1063/1.4962293},
journal = {Applied Physics Letters},
number = 9,
volume = 109,
place = {United States},
year = {Fri Sep 02 00:00:00 EDT 2016},
month = {Fri Sep 02 00:00:00 EDT 2016}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.4962293
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 14 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Band gap and structure of single crystal BiI 3 : Resolving discrepancies in literature
journal, July 2013

  • Podraza, Nikolas J.; Qiu, Wei; Hinojosa, Beverly B.
  • Journal of Applied Physics, Vol. 114, Issue 3
  • DOI: 10.1063/1.4813486

Extended Defects in CdZnTe Radiation Detectors
journal, August 2009

  • Bolotnikov, Aleksey E.; Babalola, Stephen O.; Camarda, Giuseppe S.
  • IEEE Transactions on Nuclear Science, Vol. 56, Issue 4
  • DOI: 10.1109/TNS.2009.2019960

Synchrotron radiation studies of spectral response features caused by Te inclusions in a large volume coplanar grid CdZnTe detector
journal, December 2012

  • Hansson, C. C. T.; Owens, A.; Quarati, F.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 695
  • DOI: 10.1016/j.nima.2011.10.021

Bismuth Tri-Iodide Polycrystalline Films for Digital X-Ray Radiography Applications
journal, February 2004

  • Fornaro, L.; Saucedo, E.; Mussio, L.
  • IEEE Transactions on Nuclear Science, Vol. 51, Issue 1
  • DOI: 10.1109/TNS.2004.824821

Wide-bandgap compound semiconductors for X- or gamma-ray detectors
journal, December 2011

Defect Engineering of BiI 3 Single Crystals: Enhanced Electrical and Radiation Performance for Room Temperature Gamma-Ray Detection
journal, January 2014

  • Han, HyukSu; Hong, Minki; Gokhale, Sasmit S.
  • The Journal of Physical Chemistry C, Vol. 118, Issue 6
  • DOI: 10.1021/jp411201k

Bismuth tri-iodide crystal for nuclear radiation detectors
journal, October 2002

  • Matsumoto, M.; Hitomi, K.; Shoji, T.
  • IEEE Transactions on Nuclear Science, Vol. 49, Issue 5
  • DOI: 10.1109/TNS.2002.803883

Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors
journal, August 2016

Growth, fabrication, and testing of bismuth tri-iodide semiconductor radiation detectors
journal, March 2015

Bismuth iodide crystals as a detector material: some optical and electrical properties
conference, October 1999

  • Dmitriyev, Yuriy N.; Bennett, Paul R.; Cirignano, Leonard J.
  • SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings
  • DOI: 10.1117/12.366625

Hole trapping and infrared quenching of photoconductivity in HgI2 crystals
journal, October 1975

CBRN Protection
book, January 2013

  • Richardt, Andre; Hülseweh, Birgit; Niemeyer, Bernd
  • Wiley‐VCH Verlag GmbH & Co
  • DOI: 10.1002/9783527650163

Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
journal, March 1932

BiI3 single crystal for room-temperature gamma ray detectors
journal, January 2016

  • Saito, T.; Iwasaki, T.; Kurosawa, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 806
  • DOI: 10.1016/j.nima.2015.10.036

Spectroscopy on thick HgI/sub 2/ detectors: a comparison between planar and pixelated electrodes
journal, August 2003

Long-term stability of 1-cm thick pixelated HgI/sub 2/ gamma-ray spectrometers operating at room temperature
journal, August 2004

Fabrication of high-performance CdZnTe quasi-hemispherical gamma-ray CAPture plus detectors
conference, August 2006

  • Szeles, Csaba; Bale, Derek; Grosholz, Jr., Joseph
  • SPIE Optics + Photonics, SPIE Proceedings
  • DOI: 10.1117/12.683552

A method for suppressing polarization phenomena in TlBr detectors
journal, January 2008

  • Hitomi, Keitaro; Shoji, Tadayoshi; Niizeki, Yoshio
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 585, Issue 1-2
  • DOI: 10.1016/j.nima.2007.11.012

Charge loss between contacts of CdZnTe pixel detectors
journal, August 1999

  • Bolotnikov, A. E.; Cook, W. R.; Harrison, F. A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 432, Issue 2-3
  • DOI: 10.1016/S0168-9002(99)00388-5

CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems
journal, June 1999

  • Eisen, Y.; Shor, A.; Mardor, I.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 428, Issue 1
  • DOI: 10.1016/S0168-9002(99)00003-0

Fityk : a general-purpose peak fitting program
journal, September 2010

Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method
journal, January 2016

Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectors
journal, October 2011

  • Lintereur, Azaree T.; Qiu, Wei; Nino, Juan C.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 652, Issue 1
  • DOI: 10.1016/j.nima.2010.12.013
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Dopant compensation in alloyed CH3NH3PbBr3−xClx perovskite single crystals for gamma-ray spectroscopy
    journal, July 2017

    • Wei, Haotong; DeSantis, Dylan; Wei, Wei
    • Nature Materials, Vol. 16, Issue 8
    • DOI: 10.1038/nmat4927

    The electronic structure and band interface of cesium bismuth iodide on a titania heterostructure using hard X-ray spectroscopy
    journal, January 2018

    • Phuyal, Dibya; Jain, Sagar M.; Philippe, Bertrand
    • Journal of Materials Chemistry A, Vol. 6, Issue 20
    • DOI: 10.1039/c8ta00947c

    Room temperature semiconductor detectors for nuclear security
    journal, July 2019

    • Johns, Paul M.; Nino, Juan C.
    • Journal of Applied Physics, Vol. 126, Issue 4
    • DOI: 10.1063/1.5091805

    Dopant compensation in alloyed CH3NH3PbBr3-xClx perovskite single crystals for gamma-ray spectroscopy
    text, January 2017

    • T. J., Savenije,; J., Huang,; D., Guo,
    • The University of North Carolina at Chapel Hill University Libraries
    • DOI: 10.17615/gjzh-1440
      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: