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Title: Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Abstract

We fabricated antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (241Am) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 x 10-4 cm2/V.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1366760
Alternate Identifier(s):
OSTI ID: 1357832
Grant/Contract Number:  
NA0002534; FG52-09NA29358
Resource Type:
Accepted Manuscript
Journal Name:
Radiation Measurements
Additional Journal Information:
Journal Volume: 91; Journal Issue: C; Journal ID: ISSN 1350-4487
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Radiation detector; Bismuth tri-iodide; Surface treatment; Room temperature semiconductor detector Gamma-ray detector

Citation Formats

Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., and Jordan, Kelly A.. Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors. United States: N. p., 2016. Web. https://doi.org/10.1016/j.radmeas.2016.04.004.
Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., & Jordan, Kelly A.. Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors. United States. https://doi.org/10.1016/j.radmeas.2016.04.004
Gokhale, Sasmit S., Han, HyukSu, Pelaez, Oswaldo, Baciak, James E., Nino, Juan C., and Jordan, Kelly A.. Wed . "Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors". United States. https://doi.org/10.1016/j.radmeas.2016.04.004. https://www.osti.gov/servlets/purl/1366760.
@article{osti_1366760,
title = {Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors},
author = {Gokhale, Sasmit S. and Han, HyukSu and Pelaez, Oswaldo and Baciak, James E. and Nino, Juan C. and Jordan, Kelly A.},
abstractNote = {We fabricated antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (241Am) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 x 10-4 cm2/V.},
doi = {10.1016/j.radmeas.2016.04.004},
journal = {Radiation Measurements},
number = C,
volume = 91,
place = {United States},
year = {2016},
month = {4}
}

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    Works referencing / citing this record:

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