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Title: Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Biological and Environmental Research (BER)
OSTI Identifier:
1252511
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Name: Journal of Nuclear Materials Journal Volume: 464 Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., and Zhang, Y. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier. Netherlands: N. p., 2015. Web. doi:10.1016/j.jnucmat.2015.05.001.
Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., & Zhang, Y. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier. Netherlands. https://doi.org/10.1016/j.jnucmat.2015.05.001
Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., and Zhang, Y. Tue . "Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier". Netherlands. https://doi.org/10.1016/j.jnucmat.2015.05.001.
@article{osti_1252511,
title = {Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier},
author = {Xue, H. and Xiao, H. Y. and Zhu, Z. and Shutthanandan, V. and Snead, L. L. and Boatner, L. A. and Weber, W. J. and Zhang, Y.},
abstractNote = {},
doi = {10.1016/j.jnucmat.2015.05.001},
journal = {Journal of Nuclear Materials},
number = C,
volume = 464,
place = {Netherlands},
year = {Tue Sep 01 00:00:00 EDT 2015},
month = {Tue Sep 01 00:00:00 EDT 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.jnucmat.2015.05.001

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Cited by: 1 work
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Works referenced in this record:

Near-surface and bulk behavior of Ag in SiC
journal, January 2012


Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide
journal, November 2002


Silver Release from Coated Particle Fuel
journal, September 1977

  • Nabielek, H.; Brown, P. E.; Offermann, P.
  • Nuclear Technology, Vol. 35, Issue 2
  • DOI: 10.13182/NT35-483

Study of silver diffusion in silicon carbide
journal, May 2009


Handbook of SiC properties for fuel performance modeling
journal, September 2007


Atomic scale simulation of defect production in irradiated 3C-SiC
journal, September 2001

  • Devanathan, R.; Weber, W. J.; Gao, F.
  • Journal of Applied Physics, Vol. 90, Issue 5
  • DOI: 10.1063/1.1389523

Implementation of gradient-corrected exchange-correlation potentials in Car-Parrinello total-energy calculations
journal, August 1994


Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding
journal, March 2011


The ion beam materials analysis laboratory at the environmental molecular sciences laboratory
journal, January 1999

  • Thevuthasan, S.; Peden, C. H. F.; Engelhard, M. H.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 420, Issue 1-2
  • DOI: 10.1016/S0168-9002(98)00908-5

Irradiation-induced amorphization in β-SiC
journal, March 1998


Electromechanical Computing at 500°C with Silicon Carbide
journal, September 2010


Thermal and dynamic responses of Ag implants in silicon carbide
journal, June 2004

  • Jiang, W.; Weber, W. J.; Shutthanandan, V.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 219-220
  • DOI: 10.1016/j.nimb.2004.01.134

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Evaluation of silver transport through SiC during the German HTR fuel program
journal, December 2009


The effect of annealing at 1500°C on migration and release of ion implanted silver in CVD silicon carbide
journal, October 2006


Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation
journal, September 1992


Paralinear Oxidation of CVD SiC in Water Vapor
journal, January 1997


Study of silver diffusion into Si(111) and SiO 2 at moderate temperatures
journal, August 1991

  • Nason, T. C.; Yang, G. ‐R.; Park, K. ‐H.
  • Journal of Applied Physics, Vol. 70, Issue 3
  • DOI: 10.1063/1.349547

A silicon carbide room-temperature single-photon source
journal, November 2013

  • Castelletto, S.; Johnson, B. C.; Ivády, V.
  • Nature Materials, Vol. 13, Issue 2
  • DOI: 10.1038/nmat3806

Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC
journal, April 2004

  • Zhang, Y.; Weber, W. J.; Jiang, W.
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1666974

Ab initiomolecular dynamics for liquid metals
journal, January 1993


Silicon carbide defects hold promise for device-friendly qubits
journal, January 2012


Room temperature coherent control of defect spin qubits in silicon carbide
journal, November 2011

  • Koehl, William F.; Buckley, Bob B.; Heremans, F. Joseph
  • Nature, Vol. 479, Issue 7371
  • DOI: 10.1038/nature10562

Diffusion of Ag along Σ 3 grain boundaries in 3C-SiC
journal, December 2011


SIMNRA, a simulation program for the analysis of NRA, RBS and ERDA
conference, January 1999

  • Mayer, M.
  • The fifteenth international conference on the application of accelerators in research and industry, AIP Conference Proceedings
  • DOI: 10.1063/1.59188

Diffusion of Silver and Cesium in Silicon-Carbide Coatings of Fuel Particles for High-Temperature Gas-Cooled Reactors
journal, June 1983

  • Amian, Winfried; Stöver, Detlev
  • Nuclear Technology, Vol. 61, Issue 3
  • DOI: 10.13182/NT61-475

Stability of SiC-matrix microencapsulated fuel constituents at relevant LWR conditions
journal, May 2014


SiC Recession Caused by SiO 2 Scale Volatility under Combustion Conditions: I, Experimental Results and Empirical Model
journal, July 1999