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Title: Ag out-surface diffusion in crystalline SiC with an effective SiO 2 diffusion barrier

Abstract

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope ( 110mAg) through the SiC coating layer is a safety concern. In order to understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. Our results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO 2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.

Authors:
 [1];  [1];  [2];  [2];  [3];  [3];  [4];  [4]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Biological and Environmental Research (BER) (SC-23)
OSTI Identifier:
1265823
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 464; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., and Zhang, Y. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier. United States: N. p., 2015. Web. doi:10.1016/j.jnucmat.2015.05.001.
Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., & Zhang, Y. Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier. United States. doi:10.1016/j.jnucmat.2015.05.001.
Xue, H., Xiao, H. Y., Zhu, Z., Shutthanandan, V., Snead, L. L., Boatner, L. A., Weber, W. J., and Zhang, Y. Thu . "Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier". United States. doi:10.1016/j.jnucmat.2015.05.001.
@article{osti_1265823,
title = {Ag out-surface diffusion in crystalline SiC with an effective SiO2 diffusion barrier},
author = {Xue, H. and Xiao, H. Y. and Zhu, Z. and Shutthanandan, V. and Snead, L. L. and Boatner, L. A. and Weber, W. J. and Zhang, Y.},
abstractNote = {For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. In order to understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. Our results suggest little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.},
doi = {10.1016/j.jnucmat.2015.05.001},
journal = {Journal of Nuclear Materials},
issn = {0022-3115},
number = C,
volume = 464,
place = {United States},
year = {2015},
month = {5}
}