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Title: Helical Crystalline SiC/SiO2 Core-Shell Nanowires

Abstract

Helical crystalline silicon carbide nanowires covered with a silicon oxide sheath (SiC/SiO2) have been synthesized by a chemical vapor deposition technique. The SiC core typically has diameters of 10-40 nm with a helical periodicity of 40-80 nm and is covered by a uniform layer of 30-60 nm thick amorphous SiO2. A screw-dislocation-driven growth process is proposed for the formation of this novel structure based on detailed structural characterizations. The helical nanostructures may find applications as building blocks in nanomechanical or nanoelectronic devices. The screw-dislocation-induced growth mechanism suggests that similar helical nanostructures of a wide range of materials may be synthesized.

Authors:
 [1];  [2];  [3]
  1. (WASHINGTON STATE UNIV)
  2. (BATTELLE (PACIFIC NW LAB))
  3. (WASHINGTON STATE UNIV TC)
Publication Date:
Research Org.:
Pacific Northwest National Lab., Richland, WA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
15001740
Report Number(s):
PNNL-SA-37171
KC0301020; TRN: US200406%%199
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 2; Journal Issue: 9; Other Information: PBD: 1 Jan 2002
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; PERIODICITY; SILICON CARBIDES; SILICON OXIDES; NANOWIRES; SILICON CARBIDE; MOCVD

Citation Formats

Zhang, Hai-Feng, Wang, Chongmin, and Wang, Lai-Sheng. Helical Crystalline SiC/SiO2 Core-Shell Nanowires. United States: N. p., 2002. Web. doi:10.1021/nl025667t.
Zhang, Hai-Feng, Wang, Chongmin, & Wang, Lai-Sheng. Helical Crystalline SiC/SiO2 Core-Shell Nanowires. United States. doi:10.1021/nl025667t.
Zhang, Hai-Feng, Wang, Chongmin, and Wang, Lai-Sheng. Tue . "Helical Crystalline SiC/SiO2 Core-Shell Nanowires". United States. doi:10.1021/nl025667t.
@article{osti_15001740,
title = {Helical Crystalline SiC/SiO2 Core-Shell Nanowires},
author = {Zhang, Hai-Feng and Wang, Chongmin and Wang, Lai-Sheng},
abstractNote = {Helical crystalline silicon carbide nanowires covered with a silicon oxide sheath (SiC/SiO2) have been synthesized by a chemical vapor deposition technique. The SiC core typically has diameters of 10-40 nm with a helical periodicity of 40-80 nm and is covered by a uniform layer of 30-60 nm thick amorphous SiO2. A screw-dislocation-driven growth process is proposed for the formation of this novel structure based on detailed structural characterizations. The helical nanostructures may find applications as building blocks in nanomechanical or nanoelectronic devices. The screw-dislocation-induced growth mechanism suggests that similar helical nanostructures of a wide range of materials may be synthesized.},
doi = {10.1021/nl025667t},
journal = {Nano Letters},
number = 9,
volume = 2,
place = {United States},
year = {2002},
month = {1}
}