Effects of type of reactor, crystallinity of SiC, and NF{sub 3} gas pressure on etching rate and smoothness of SiC surface using NF{sub 3} gas plasma
- Department of Molecular Chemistry and Biochemistry, Faculty of Science and Engineering, Doshisha University, 1-3 Miyako-dani, Tatara, Kyotanabe, Kyoto 610-0321, Japan and Department of Applied Chemistry, Graduate School of Engineering, Doshisha University, 1-3 Miyako-dani, Tatara, Kyotanabe, Kyoto 610-0321 (Japan)
Polycrystalline {beta}-SiC and single-crystalline 4H-SiC surfaces were etched by reactive ion etching (RIE) using NF{sub 3} gas plasma. A smooth surface was obtained on the polycrystalline SiC after RIE at NF{sub 3} gas pressures of 2 and 10 Pa for 10 min, and neither spikes nor pillars were formed on it. On the other hand, some pillars were formed on the single-crystalline SiC surface by RIE at NF{sub 3} gas pressures of 2 and 10 Pa. Though the absence of carbon-rich regions and SiO{sub x} on the outermost surface before etching was confirmed by x-ray photoelectron spectroscopy and Raman analysis, x-ray diffraction analysis revealed that graphite crystallites were present in the single-crystalline SiC bulk. It was concluded that the graphite crystallites acted as masks and the pillars grew up from the graphite crystallites in the single crystalline SiC during RIE.
- OSTI ID:
- 22051052
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 6; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
ETCHING
GRAPHITE
IONS
MONOCRYSTALS
NITROGEN FLUORIDES
PLASMA
POLYCRYSTALS
RAMAN SPECTRA
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON OXIDES
SPUTTERING
SURFACES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY