Effect of carbon ion irradiation on Ag diffusion in SiC

Leng, Bin; Ko, Hyunseok; Gerczak, Tyler J.; Deng, Jie; Giordani, Andrew J.; Hunter, Jerry L.; Morgan, Dane; Szlufarska, Izabela; Sridharan, Kumar

doi:10.1016/j.jnucmat.2015.11.017

Title: Effect of carbon ion irradiation on Ag diffusion in SiC

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Abstract

Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with C²⁺ ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.

Authors:

Leng, Bin ^[1]; Ko, Hyunseok ^[2]; Gerczak, Tyler J. ^[2]; Deng, Jie ^[3]; Giordani, Andrew J. ^[4]; Hunter, Jerry L. ^[5]; Morgan, Dane ^[6]; Szlufarska, Izabela ^[6]; Sridharan, Kumar ^[6]

Univ. of Wisconsin, Madison, WI (United States). Engineering Physics Dept.
Univ. of Wisconsin, Madison, WI (United States). Material Science Program
Univ. of Wisconsin, Madison, WI (United States). Materials Science and Engineering Dept.
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Nanoscale Characterization and Fabrication Lab.
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Nanoscale Characterization and Fabrication Lab.; Univ. of Wisconsin, Madison, WI (United States). Materials Science Center
Univ. of Wisconsin, Madison, WI (United States). Engineering Physics Dept.; Univ. of Wisconsin, Madison, WI (United States). Material Science Program; Univ. of Wisconsin, Madison, WI (United States). Materials Science and Engineering Dept.

Publication Date:: Sat Nov 14 00:00:00 EST 2015

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Nuclear Energy (NE)

OSTI Identifier:: 1295098

Alternate Identifier(s):: OSTI ID: 1252058

Grant/Contract Number:: AC05-00OR22725; 1-2988; AC07-051D14517; 11-2988

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Nuclear Materials

Additional Journal Information:: Journal Volume: 471; Journal Issue: C; Journal ID: ISSN 0022-3115

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; Implantation; SiC; Diffusion; TRISO; Silver; Silicon carbide

Citation Formats


                    Leng, Bin, Ko, Hyunseok, Gerczak, Tyler J., Deng, Jie, Giordani, Andrew J., Hunter, Jerry L., Morgan, Dane, Szlufarska, Izabela, and Sridharan, Kumar. Effect of carbon ion irradiation on Ag diffusion in SiC.  United States: N. p., 2015. 
Web.  doi:10.1016/j.jnucmat.2015.11.017.

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                    Leng, Bin, Ko, Hyunseok, Gerczak, Tyler J., Deng, Jie, Giordani, Andrew J., Hunter, Jerry L., Morgan, Dane, Szlufarska, Izabela, & Sridharan, Kumar. Effect of carbon ion irradiation on Ag diffusion in SiC.  United States.  https://doi.org/10.1016/j.jnucmat.2015.11.017

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                    Leng, Bin, Ko, Hyunseok, Gerczak, Tyler J., Deng, Jie, Giordani, Andrew J., Hunter, Jerry L., Morgan, Dane, Szlufarska, Izabela, and Sridharan, Kumar. Sat .  
"Effect of carbon ion irradiation on Ag diffusion in SiC".  United States.  https://doi.org/10.1016/j.jnucmat.2015.11.017.  https://www.osti.gov/servlets/purl/1295098.

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@article{osti_1295098,

  title        = {Effect of carbon ion irradiation on Ag diffusion in SiC},

  author       = {Leng, Bin and Ko, Hyunseok and Gerczak, Tyler J. and Deng, Jie and Giordani, Andrew J. and Hunter, Jerry L. and Morgan, Dane and Szlufarska, Izabela and Sridharan, Kumar},

  abstractNote = {Transport of Ag fission product through the silicon-carbide (SiC) diffusion barrier layer in TRISO fuel particles is of considerable interest given the application of this fuel type in high temperature gas-cooled reactor (HTGR) and other future reactor concepts. The reactor experiments indicate that radiation may play an important role in release of Ag; however so far the isolated effect of radiation on Ag diffusion has not been investigated in controlled laboratory experiments. In this study, we investigate the diffusion couples of Ag and polycrystalline 3C–SiC, as well as Ag and single crystalline 4H–SiC samples before and after irradiation with C2+ ions. The diffusion couple samples were exposed to temperatures of 1500 °C, 1535 °C, and 1569 °C, and the ensuing diffusion profiles were analyzed by secondary ion mass spectrometry (SIMS). We found that diffusion coefficients calculated from these measurements indicate that Ag diffusion was greatly enhanced by carbon irradiation due to a combined effect of radiation damage on diffusion and the presence of grain boundaries in polycrystalline SiC samples.},

  doi          = {10.1016/j.jnucmat.2015.11.017},

  journal      = {Journal of Nuclear Materials},

  number       = C,

  volume       = 471,

  place        = {United States},

  year         = {Sat Nov 14 00:00:00 EST 2015},

  month        = {Sat Nov 14 00:00:00 EST 2015}

}

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