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Title: Observations of Ag diffusion in ion implanted SiC

The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.
 [1] ;  [1] ;  [1] ; ;  [2] ;  [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Virginia Tech, Blacksburg, VA (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725; AC07-05ID14517; 11-2988; AC07-051D14517
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 461; Journal ID: ISSN 0022-3115
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Nuclear Energy (NE)
Country of Publication:
United States
36 MATERIALS SCIENCE; 11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; Silicon carbide; TRISO; ion implantation; silver; diffusion
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1246640