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Title: Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions

Abstract

Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Escuela Politecnica Nacional, Quito (Ecuador)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1247942
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 31; Journal Issue: 07; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, and Wang, Kei. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions. United States: N. p., 2016. Web. doi:10.1557/jmr.2016.35.
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Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, & Wang, Kei. Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions. United States. https://doi.org/10.1557/jmr.2016.35
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Puretzky, Alexander A., Basile, Leonardo, Idrobo, Juan Carlos, Rouleau, Christopher M., Geohegan, David B., Xiao, Kai, Li, Xufan, Lin, Ming -Wei, and Wang, Kei. Tue . "Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions". United States. https://doi.org/10.1557/jmr.2016.35. https://www.osti.gov/servlets/purl/1247942.
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@article{osti_1247942,
title = {Persistent photoconductivity in two-dimensional Mo1-xW xSe2–MoSe2 van der Waals heterojunctions},
author = {Puretzky, Alexander A. and Basile, Leonardo and Idrobo, Juan Carlos and Rouleau, Christopher M. and Geohegan, David B. and Xiao, Kai and Li, Xufan and Lin, Ming -Wei and Wang, Kei},
abstractNote = {Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.},
doi = {10.1557/jmr.2016.35},
journal = {Journal of Materials Research},
number = 07,
volume = 31,
place = {United States},
year = {Tue Feb 16 00:00:00 EST 2016},
month = {Tue Feb 16 00:00:00 EST 2016}
}
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https://doi.org/10.1557/jmr.2016.35
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    Works referencing / citing this record:

    Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2
    journal, October 2016

    • Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan
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    XPS experimental and DFT investigations on solid solutions of Mo 1−x Re x S 2 (0 < x < 0.20)
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    Transient decay of photoinduced current in semiconductors and heterostructures
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    • DOI: 10.3390/app9061110

    Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
    journal, September 2017

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