Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

Gong, Yongji; Lei, Sidong; Lou, Jun; Liu, Zheng; Vajtai, Robert; Zhou, Wu; Ajayan, Pullikel M.; Ye, Gonglan; Li, Bo; He, Yongmin; Keyshar, Kunttal; Zhang, Xiang; Wang, Qizhong

doi:10.1021/acs.nanolett.5b02423

Title: Two-step growth of two-dimensional WSe₂/MoSe₂ heterostructures

Abstract

Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe₂ was synthesized first and followed by an epitaxial growth of WSe₂ on the edge and on the top surface of MoSe₂. Compared to previously reported one-step growth methods, this two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe₂/MoSe₂ bilayer regions and much sharper in-plane interfaces than the previously reported MoSe₂/WSe₂ heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe₂/MoSe₂ bilayer and the exposed MoSe₂ monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, amore »« less

Authors:

Gong, Yongji ^[1]; Lei, Sidong ^[1]; Lou, Jun ^[1]; Liu, Zheng ^[2]; Vajtai, Robert ^[1]; Zhou, Wu ^[3]; Ajayan, Pullikel M. ^[1]; Ye, Gonglan ^[1]; Li, Bo ^[1]; He, Yongmin ^[1]; Keyshar, Kunttal ^[1]; Zhang, Xiang ^[1]; Wang, Qizhong ^[1]

Rice Univ., Houston, TX (United States)
Nanyang Technological Univ. (Singapore)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Mon Aug 03 00:00:00 EDT 2015

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1214512

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 15; Journal Issue: 9; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 2D heterostructures; two-step growth; MoSe₂; WSe₂; CVD

Citation Formats


                    Gong, Yongji, Lei, Sidong, Lou, Jun, Liu, Zheng, Vajtai, Robert, Zhou, Wu, Ajayan, Pullikel M., Ye, Gonglan, Li, Bo, He, Yongmin, Keyshar, Kunttal, Zhang, Xiang, and Wang, Qizhong. Two-step growth of two-dimensional WSe2/MoSe2 heterostructures.  United States: N. p., 2015. 
Web.  doi:10.1021/acs.nanolett.5b02423.

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                    Gong, Yongji, Lei, Sidong, Lou, Jun, Liu, Zheng, Vajtai, Robert, Zhou, Wu, Ajayan, Pullikel M., Ye, Gonglan, Li, Bo, He, Yongmin, Keyshar, Kunttal, Zhang, Xiang, & Wang, Qizhong. Two-step growth of two-dimensional WSe2/MoSe2 heterostructures.  United States.  https://doi.org/10.1021/acs.nanolett.5b02423

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                    Gong, Yongji, Lei, Sidong, Lou, Jun, Liu, Zheng, Vajtai, Robert, Zhou, Wu, Ajayan, Pullikel M., Ye, Gonglan, Li, Bo, He, Yongmin, Keyshar, Kunttal, Zhang, Xiang, and Wang, Qizhong. Mon .  
"Two-step growth of two-dimensional WSe2/MoSe2 heterostructures".  United States.  https://doi.org/10.1021/acs.nanolett.5b02423.  https://www.osti.gov/servlets/purl/1214512.

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@article{osti_1214512,

  title        = {Two-step growth of two-dimensional WSe2/MoSe2 heterostructures},

  author       = {Gong, Yongji and Lei, Sidong and Lou, Jun and Liu, Zheng and Vajtai, Robert and Zhou, Wu and Ajayan, Pullikel M. and Ye, Gonglan and Li, Bo and He, Yongmin and Keyshar, Kunttal and Zhang, Xiang and Wang, Qizhong},

  abstractNote = {Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe2 was synthesized first and followed by an epitaxial growth of WSe2 on the edge and on the top surface of MoSe2. Compared to previously reported one-step growth methods, this two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe2/MoSe2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe2/WSe2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe2/MoSe2 bilayer and the exposed MoSe2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.},

  doi          = {10.1021/acs.nanolett.5b02423},

  journal      = {Nano Letters},

  number       = 9,

  volume       = 15,

  place        = {United States},

  year         = {Mon Aug 03 00:00:00 EDT 2015},

  month        = {Mon Aug 03 00:00:00 EDT 2015}

}

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Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene
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Title: Two-step growth of two-dimensional WSe2/MoSe2 heterostructures

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The Role of Graphene and Other 2D Materials in Solar Photovoltaics journal, September 2018

Recent Advances in Synthesis and Applications of 2D Junctions journal, August 2018

2D/2D Heterojunctions for Catalysis journal, January 2019

Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure journal, September 2019

A two-dimensional vertical van der Waals heterostructure based on g-GaN and Mg(OH) 2 used as a promising photocatalyst for water splitting: A first-principles calculation journal, August 2019

Few-Layer β - Sn Se with Strong Visible Light Absorbance and Ultrahigh Carrier Mobility journal, January 2020

Integrated Quasiplane Heteronanostructures of MoSe 2 /Bi 2 Se 3 Hexagonal Nanosheets: Synergetic Electrocatalytic Water Splitting and Enhanced Supercapacitor Performance journal, November 2017

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices journal, March 2018

Improved Electrical Contact Properties of MoS 2 ‐Graphene Lateral Heterostructure journal, December 2018

Surface Engineering of Two-Dimensional Materials journal, June 2018

In situ exploration of the thermodynamic evolution properties in the type II interface from the WSe 2 –WS 2 lateral heterojunction journal, August 2018

Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations journal, August 2019

Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides journal, January 2017

Spotting the differences in two-dimensional materials – the Raman scattering perspective journal, January 2018

Thermally Induced 2D Alloy-Heterostructure Transformation in Quaternary Alloys journal, September 2018

Photocatalytic Activity of Nonprecious Metal WSe 2 /g-C 3 N 4 Composite Under Visible Light Irradiation journal, April 2020

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions journal, March 2019

Self-assembly of ordered graphene nanodot arrays journal, June 2017

Hydrogen-assisted step-edge nucleation of MoSe 2 monolayers on sapphire substrates journal, January 2019

Plasma-Induced Phase Transformation of SnS2 to SnS journal, July 2018

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides journal, March 2019

Constructing 1D/2D heterojunction photocatalyst from FeSe 2 nanorods and MoSe 2 nanoplates with high photocatalytic and photoelectrochemical performance journal, November 2019

One-Step CVD Synthesis of Few-Layer SnS 2 /MoS 2 Vertical Heterostructures journal, October 2019

2D Layered Material-Based van der Waals Heterostructures for Optoelectronics journal, January 2018

Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator journal, September 2017

Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain journal, March 2018

Morphology Engineering in Monolayer MoS 2 ‐WS 2 Lateral Heterostructures journal, June 2018

Atomic‐Scale Fabrication of In‐Plane Heterojunctions of Few‐Layer MoS 2 via In Situ Scanning Transmission Electron Microscopy journal, December 2019

Facile Synthesis of Single Crystal PtSe 2 Nanosheets for Nanoscale Electronics journal, October 2016

Modeling the vertical growth of van der Waals stacked 2D materials using the diffuse domain method journal, January 2020

Title: Two-step growth of two-dimensional WSe₂/MoSe₂ heterostructures

Boron nitride substrates for high-quality graphene electronics
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Single-layer MoS₂ transistors
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Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS₂ and WSe₂ Nanosheets
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Single-Layer MoS₂ Phototransistors
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Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature
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Two-dimensional gas of massless Dirac fermions in graphene
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Graphene transistors
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Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
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Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
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Chemical Vapor Deposition Growth of Crystalline Monolayer MoSe₂
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Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂
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Field-effect transistors and intrinsic mobility in ultra-thin MoSe₂ layers
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High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts
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Optical generation of excitonic valley coherence in monolayer WSe2
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Graphene and boron nitride lateral heterostructures for atomically thin circuitry
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In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes
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Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers
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Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
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Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
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Quantum Cascade Laser
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Design and fabrication of double modulation doped InAlAs/lnGaAs/InAs heterojunction FETs for high-speed and millimeter-wave applications
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Electronic properties of the MoS $_{2}$ -WS $_{2}$ heterojunction
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Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition
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Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
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Epitaxial growth of single-domain graphene on hexagonal boron nitride
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Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers
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Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
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Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors
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Large-Area Synthesis of Highly Crystalline WSe ₂ Monolayers and Device Applications
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Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
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Solar-energy conversion and light emission in an atomic monolayer p–n diode
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Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
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Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
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Synthesis of transition metal dichalcogenides and their heterostructures
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Band gap engineering of atomically thin two-dimensional semiconductors
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Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures
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Controlling the electronic properties of van der Waals heterostructures by applying electrostatic design
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Novel Optoelectronic Devices: Transition-Metal-Dichalcogenide-Based 2D Heterostructures
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Atomic scale depletion region at one dimensional MoSe ₂ -WSe ₂ heterointerface
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Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions
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Challenges and recent advancements of functionalization of two-dimensional nanostructured molybdenum trioxide and dichalcogenides
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Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family
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Recent Progress on Two‐Dimensional Heterostructures for Catalytic, Optoelectronic, and Energy Applications
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In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures
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Epitaxial growth of HfS ₂ on sapphire by chemical vapor deposition and application for photodetectors
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Inorganic 2D Luminescent Materials: Structure, Luminescence Modulation, and Applications
journal, October 2019

The Role of Graphene and Other 2D Materials in Solar Photovoltaics
journal, September 2018

Recent Advances in Synthesis and Applications of 2D Junctions
journal, August 2018

2D/2D Heterojunctions for Catalysis
journal, January 2019

Broadband photodetection of 2D Bi2O2Se–MoSe2 heterostructure
journal, September 2019

A two-dimensional vertical van der Waals heterostructure based on g-GaN and Mg(OH) ₂ used as a promising photocatalyst for water splitting: A first-principles calculation
journal, August 2019

Few-Layer $β$ - $Sn Se$ with Strong Visible Light Absorbance and Ultrahigh Carrier Mobility
journal, January 2020

Integrated Quasiplane Heteronanostructures of MoSe ₂ /Bi ₂ Se ₃ Hexagonal Nanosheets: Synergetic Electrocatalytic Water Splitting and Enhanced Supercapacitor Performance
journal, November 2017

Dislocation-driven growth of two-dimensional lateral quantum-well superlattices
journal, March 2018

Improved Electrical Contact Properties of MoS ₂ ‐Graphene Lateral Heterostructure
journal, December 2018

Surface Engineering of Two-Dimensional Materials
journal, June 2018

In situ exploration of the thermodynamic evolution properties in the type II interface from the WSe ₂ –WS ₂ lateral heterojunction
journal, August 2018

Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations
journal, August 2019

Straintronics in two-dimensional in-plane heterostructures of transition-metal dichalcogenides
journal, January 2017

Spotting the differences in two-dimensional materials – the Raman scattering perspective
journal, January 2018

Thermally Induced 2D Alloy-Heterostructure Transformation in Quaternary Alloys
journal, September 2018

Photocatalytic Activity of Nonprecious Metal WSe ₂ /g-C ₃ N ₄ Composite Under Visible Light Irradiation
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Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions
journal, March 2019

Self-assembly of ordered graphene nanodot arrays
journal, June 2017

Hydrogen-assisted step-edge nucleation of MoSe ₂ monolayers on sapphire substrates
journal, January 2019

Plasma-Induced Phase Transformation of SnS2 to SnS
journal, July 2018

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides
journal, March 2019

Constructing 1D/2D heterojunction photocatalyst from FeSe ₂ nanorods and MoSe ₂ nanoplates with high photocatalytic and photoelectrochemical performance
journal, November 2019

One-Step CVD Synthesis of Few-Layer SnS ₂ /MoS ₂ Vertical Heterostructures
journal, October 2019

2D Layered Material-Based van der Waals Heterostructures for Optoelectronics
journal, January 2018

Schottky solar cell using few-layered transition metal dichalcogenides toward large-scale fabrication of semitransparent and flexible power generator
journal, September 2017

Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain
journal, March 2018

Morphology Engineering in Monolayer MoS 2 ‐WS 2 Lateral Heterostructures
journal, June 2018

Atomic‐Scale Fabrication of In‐Plane Heterojunctions of Few‐Layer MoS ₂ via In Situ Scanning Transmission Electron Microscopy
journal, December 2019

Facile Synthesis of Single Crystal PtSe ₂ Nanosheets for Nanoscale Electronics
journal, October 2016

Modeling the vertical growth of van der Waals stacked 2D materials using the diffuse domain method
journal, January 2020

Nonhierarchical Heterostructured Fe ₂ O ₃ /Mn ₂ O ₃ Porous Hollow Spheres for Enhanced Lithium Storage
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Two-dimensional light-emitting materials: preparation, properties and applications
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