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Title: Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis ofmore » large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Escuela Politecnica Nacional, Quito (Ecuador)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1214495
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 9; Journal Issue: 8; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; van der Waals epitaxy; heterostructures; GaSe; chemical vapor deposition; graphene

Citation Formats

Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States: N. p., 2015. Web. doi:10.1021/acsnano.5b01943.
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Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., & Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States. https://doi.org/10.1021/acsnano.5b01943
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Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Wed . "Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene". United States. https://doi.org/10.1021/acsnano.5b01943. https://www.osti.gov/servlets/purl/1214495.
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@article{osti_1214495,
title = {Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene},
author = {Li, Xufan and Basile, Leonardo and Huang, Bing and Ma, Cheng and Lee, Jaekwang and Vlassiouk, Ivan V. and Puretzky, Alexander A. and Lin, Ming -Wei and Chi, Miaofang and Idrobo Tapia, Juan Carlos and Rouleau, Christopher M. and Sumpter, Bobby G. and Yoon, Mina and Geohegan, David B. and Xiao, Kai},
abstractNote = {Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.},
doi = {10.1021/acsnano.5b01943},
journal = {ACS Nano},
number = 8,
volume = 9,
place = {United States},
year = {Wed Jul 22 00:00:00 EDT 2015},
month = {Wed Jul 22 00:00:00 EDT 2015}
}
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https://doi.org/10.1021/acsnano.5b01943
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Works referenced in this record:

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Tunable metal–insulator transition in double-layer graphene heterostructures
journal, October 2011

  • Ponomarenko, L. A.; Geim, A. K.; Zhukov, A. A.
  • Nature Physics, Vol. 7, Issue 12
  • DOI: 10.1038/nphys2114

Strong Coulomb drag and broken symmetry in double-layer graphene
journal, October 2012

  • Gorbachev, R. V.; Geim, A. K.; Katsnelson, M. I.
  • Nature Physics, Vol. 8, Issue 12
  • DOI: 10.1038/nphys2441

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics
journal, September 2013

  • Zhang, Kai; Yap, Fung Ling; Li, Kun
  • Advanced Functional Materials, Vol. 24, Issue 6
  • DOI: 10.1002/adfm.201302009

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
journal, December 2012

  • Georgiou, Thanasis; Jalil, Rashid; Belle, Branson D.
  • Nature Nanotechnology, Vol. 8, Issue 2
  • DOI: 10.1038/nnano.2012.224

Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
journal, October 2013

  • Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit
  • Nature Nanotechnology, Vol. 8, Issue 11
  • DOI: 10.1038/nnano.2013.206

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
journal, October 2013

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014

  • Fang, H.; Battaglia, C.; Carraro, C.
  • Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
  • DOI: 10.1073/pnas.1405435111

Artificially Stacked Atomic Layers: Toward New van der Waals Solids
journal, June 2012

  • Gao, Guanhui; Gao, Wei; Cannuccia, E.
  • Nano Letters, Vol. 12, Issue 7
  • DOI: 10.1021/nl301061b

Epitaxial growth of single-domain graphene on hexagonal boron nitride
journal, July 2013

  • Yang, Wei; Chen, Guorui; Shi, Zhiwen
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3695

Chemical Vapor Deposition and Characterization of Aligned and Incommensurate Graphene/Hexagonal Boron Nitride Heterostack on Cu(111)
journal, May 2013

  • Roth, Silvan; Matsui, Fumihiko; Greber, Thomas
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl400815w

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates
journal, May 2012

  • Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu
  • Nano Letters, Vol. 12, Issue 6, p. 2784-2791
  • DOI: 10.1021/nl204562j

Direct Synthesis of van der Waals Solids
journal, March 2014

  • Lin, Yu-Chuan; Lu, Ning; Perea-Lopez, Nestor
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn5003858

Controlled van der Waals Epitaxy of Monolayer MoS 2 Triangular Domains on Graphene
journal, February 2015

  • Ago, Hiroki; Endo, Hiroko; Solís-Fernández, Pablo
  • ACS Applied Materials & Interfaces, Vol. 7, Issue 9
  • DOI: 10.1021/am508569m

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene
journal, November 2014

  • Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna
  • Nano Letters, Vol. 14, Issue 12
  • DOI: 10.1021/nl503144a

Photoelectric properties of Bi2O3∕GaSe heterojunctions
journal, February 2009

  • Leontie, L.; Evtodiev, I.; Nedeff, V.
  • Applied Physics Letters, Vol. 94, Issue 7
  • DOI: 10.1063/1.3035854

Efficient, tunable, and coherent 018–527-THz source based on GaSe crystal
journal, January 2002

  • Shi, Wei; Ding, Yujie J.; Fernelius, Nils
  • Optics Letters, Vol. 27, Issue 16
  • DOI: 10.1364/OL.27.001454

Effective nonlinear GaSe crystal. Optical properties and applications
journal, May 2009

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse
journal, June 2014

  • Li, Xufan; Lin, Ming-Wei; Puretzky, Alexander A.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05497

Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
journal, June 2012

  • Hu, PingAn; Wen, Zhenzhong; Wang, Lifeng
  • ACS Nano, Vol. 6, Issue 7
  • DOI: 10.1021/nn300889c

Ultrafast graphene photodetector
journal, October 2009

  • Xia, Fengnian; Mueller, Thomas; Lin, Yu-ming
  • Nature Nanotechnology, Vol. 4, Issue 12, p. 839-843
  • DOI: 10.1038/nnano.2009.292

Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure
journal, September 2013

  • Vlassiouk, Ivan; Smirnov, Sergei; Regmi, Murari
  • The Journal of Physical Chemistry C, Vol. 117, Issue 37
  • DOI: 10.1021/jp4047648

Surface-Induced Orientation Control of CuPc Molecules for the Epitaxial Growth of Highly Ordered Organic Crystals on Graphene
journal, February 2013

  • Xiao, Kai; Deng, Wan; Keum, Jong K.
  • Journal of the American Chemical Society, Vol. 135, Issue 9
  • DOI: 10.1021/ja3125096

Origin of New Broad Raman D and G Peaks in Annealed Graphene
journal, September 2013

  • Hong, Jinpyo; Park, Min Kyu; Lee, Eun Jung
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02700

Freestanding van der Waals Heterostructures of Graphene and Transition Metal Dichalcogenides
journal, May 2015

Van der Waals epitaxy for highly lattice-mismatched systems
journal, May 1999

Digital Transfer Growth of Patterned 2D Metal Chalcogenides by Confined Nanoparticle Evaporation
journal, October 2014

  • Mahjouri-Samani, Masoud; Tian, Mengkun; Wang, Kai
  • ACS Nano, Vol. 8, Issue 11, p. 11567-11575
  • DOI: 10.1021/nn5048124

Large-Area Epitaxial Monolayer MoS 2
journal, February 2015

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
journal, September 2014

  • Liu, Kaihui; Zhang, Liming; Cao, Ting
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5966

Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
journal, January 2013

  • Wu, Sanfeng; Ross, Jason S.; Liu, Gui-Bin
  • Nature Physics, Vol. 9, Issue 3
  • DOI: 10.1038/nphys2524

Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals
journal, January 2015

  • Li, Xufan; Basile, Leonardo; Yoon, Mina
  • Angewandte Chemie International Edition, Vol. 54, Issue 9
  • DOI: 10.1002/anie.201409743

Synthesis and Photoresponse of Large GaSe Atomic Layers
journal, May 2013

  • Lei, Sidong; Ge, Liehui; Liu, Zheng
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl4010089

Epitaxy and Photoresponse of Two-Dimensional GaSe Crystals on Flexible Transparent Mica Sheets
journal, January 2014

  • Zhou, Yubing; Nie, Yufeng; Liu, Yujing
  • ACS Nano, Vol. 8, Issue 2
  • DOI: 10.1021/nn405529r

Can Graphene be used as a Substrate for Raman Enhancement?
journal, February 2010

  • Ling, Xi; Xie, Liming; Fang, Yuan
  • Nano Letters, Vol. 10, Issue 2
  • DOI: 10.1021/nl903414x

Raman Enhancement Effect on Two-Dimensional Layered Materials: Graphene, h-BN and MoS 2
journal, April 2014

  • Ling, Xi; Fang, Wenjing; Lee, Yi-Hsien
  • Nano Letters, Vol. 14, Issue 6
  • DOI: 10.1021/nl404610c

Ligand-Controlled Microwave Synthesis of Cubic and Hexagonal CdSe Nanocrystals Supported on Graphene. Photoluminescence Quenching by Graphene
journal, November 2010

  • Zedan, Abdallah F.; Sappal, Samay; Moussa, Sherif
  • The Journal of Physical Chemistry C, Vol. 114, Issue 47
  • DOI: 10.1021/jp107297x

A grid-based Bader analysis algorithm without lattice bias
journal, January 2009

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

  • Grimme, Stefan
  • Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
  • DOI: 10.1002/jcc.20495
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    • DOI: 10.1039/c8cs00094h

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    Interlayer coupling of a direct van der Waals epitaxial MoS 2 /graphene heterostructure
    journal, January 2016

    • Wan, Wen; Li, Xiaodan; Li, Xiuting
    • RSC Advances, Vol. 6, Issue 1
    • DOI: 10.1039/c5ra22768b

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