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Title: Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

Abstract

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriersmore » between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Authors:
 [1];  [1];  [2];  [3];  [1];  [1];  [1];  [4];  [5];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  2. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  3. Beijing Computational Science Research Center, Beijing, (China); Univ. of Utah, Salt Lake City, UT (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  5. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1248775
Alternate Identifier(s):
OSTI ID: 1597771
Grant/Contract Number:  
AC05-00OR22725; FG02-09ER46554
Resource Type:
Accepted Manuscript
Journal Name:
Science Advances
Additional Journal Information:
Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2375-2548
Publisher:
AAAS
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Two-dimensional; van der Waals epitaxylattice-misfit; heterostructure; photovoltaic

Citation Formats

Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. United States: N. p., 2016. Web. doi:10.1126/sciadv.1501882.
Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., & Xiao, Kai. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. United States. doi:10.1126/sciadv.1501882.
Li, Xufan, Lin, Ming-Wei, Lin, Junhao, Huang, Bing, Puretzky, Alexander A., Ma, Cheng, Wang, Kai, Zhou, Wu, Pantelides, Sokrates T., Chi, Miaofang, Kravchenko, Ivan, Fowlkes, Jason, Rouleau, Christopher M., Geohegan, David B., and Xiao, Kai. Fri . "Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy". United States. doi:10.1126/sciadv.1501882. https://www.osti.gov/servlets/purl/1248775.
@article{osti_1248775,
title = {Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy},
author = {Li, Xufan and Lin, Ming-Wei and Lin, Junhao and Huang, Bing and Puretzky, Alexander A. and Ma, Cheng and Wang, Kai and Zhou, Wu and Pantelides, Sokrates T. and Chi, Miaofang and Kravchenko, Ivan and Fowlkes, Jason and Rouleau, Christopher M. and Geohegan, David B. and Xiao, Kai},
abstractNote = {Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.},
doi = {10.1126/sciadv.1501882},
journal = {Science Advances},
number = 4,
volume = 2,
place = {United States},
year = {2016},
month = {4}
}

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