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Title: Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
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  1. Noyes Laboratory, Watson Laboratory, and Beckman Institute, California Institute of Technology, Pasadena, California 91125, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1114977
Grant/Contract Number:  
FG02-03ER15483
Resource Type:
Published Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 112 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., and Lewis, Nathan S. Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation. United States: N. p., 2012. Web. doi:10.1063/1.4765030.
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Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., & Lewis, Nathan S. Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation. United States. https://doi.org/10.1063/1.4765030
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Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., and Lewis, Nathan S. Wed . "Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation". United States. https://doi.org/10.1063/1.4765030.
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@article{osti_1114977,
title = {Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation},
author = {Kimball, Gregory M. and Bosco, Jeffrey P. and Müller, Astrid M. and Tajdar, Syed F. and Brunschwig, Bruce S. and Atwater, Harry A. and Lewis, Nathan S.},
abstractNote = {},
doi = {10.1063/1.4765030},
journal = {Journal of Applied Physics},
number = 10,
volume = 112,
place = {United States},
year = {Wed Nov 21 00:00:00 EST 2012},
month = {Wed Nov 21 00:00:00 EST 2012}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4765030
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Cited by: 11 works
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Works referenced in this record:

The growth of large Zn3P2 crystals by vapor transport
journal, August 1980

Mg diffused zinc phosphide n / p junctions
journal, January 1982

  • Bhushan, M.
  • Journal of Applied Physics, Vol. 53, Issue 1
  • DOI: 10.1063/1.329956

Barrier heights of evaporated metal contacts on Zn3P2
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Surface chemistry of Zn3P3 single crystals studied by XPS
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  • Applied Physics B Photophysics and Laser Chemistry, Vol. 43, Issue 3
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Polycrystalline Zn 3 P 2 /Indium-Tin Oxide Solar Cells
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Polycrystalline Zn 3 P 2 Schottky barrier solar cells
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Native oxides on etched Zn 3 P 2 surfaces studied by x‐ray photoelectron spectroscopy
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Zinc phosphide‐zinc oxide heterojunction solar cells
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Properties of zinc‐phosphide junctions and interfaces
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Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2
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  • Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.
  • Applied Physics Letters, Vol. 95, Issue 11
  • DOI: 10.1063/1.3225151

Physics of Semiconductor Devices
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Preparation and electrical properties of heterojunctions of ZnO on Zn 3 P 2 and CdTe
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Analysis of the decay of picosecond fluorescence in semiconductors
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Spectral response measurements of minority‐carrier diffusion length in Zn 3 P 2
journal, March 1979

  • Wyeth, N. Convers; Catalano, A.
  • Journal of Applied Physics, Vol. 50, Issue 3
  • DOI: 10.1063/1.326122

Valence‐band electronic structure of Zn 3 P 2 as a function of annealing as studied by synchrotron radiation photoemission
journal, February 1990

  • Nelson, Art J.; Kazmerski, L. L.; Engelhardt, Mike
  • Journal of Applied Physics, Vol. 67, Issue 3
  • DOI: 10.1063/1.345695

Lattice modes of Zn3P2
journal, May 1988

Properties of zinc phosphide/zinc oxide heterojunctions
journal, February 1982

  • Nayar, P. S.
  • Journal of Applied Physics, Vol. 53, Issue 2
  • DOI: 10.1063/1.330518
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