skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Noyes Laboratory, Watson Laboratory, and Beckman Institute, California Institute of Technology, Pasadena, California 91125, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1114977
Grant/Contract Number:  
FG02-03ER15483
Resource Type:
Published Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 112 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., and Lewis, Nathan S. Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation. United States: N. p., 2012. Web. doi:10.1063/1.4765030.
Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., & Lewis, Nathan S. Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation. United States. doi:10.1063/1.4765030.
Kimball, Gregory M., Bosco, Jeffrey P., Müller, Astrid M., Tajdar, Syed F., Brunschwig, Bruce S., Atwater, Harry A., and Lewis, Nathan S. Wed . "Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation". United States. doi:10.1063/1.4765030.
@article{osti_1114977,
title = {Passivation of Zn3P2 substrates by aqueous chemical etching and air oxidation},
author = {Kimball, Gregory M. and Bosco, Jeffrey P. and Müller, Astrid M. and Tajdar, Syed F. and Brunschwig, Bruce S. and Atwater, Harry A. and Lewis, Nathan S.},
abstractNote = {},
doi = {10.1063/1.4765030},
journal = {Journal of Applied Physics},
number = 10,
volume = 112,
place = {United States},
year = {2012},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4765030

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

The growth of large Zn3P2 crystals by vapor transport
journal, August 1980


Mg diffused zinc phosphide n / p junctions
journal, January 1982

  • Bhushan, M.
  • Journal of Applied Physics, Vol. 53, Issue 1
  • DOI: 10.1063/1.329956

Barrier heights of evaporated metal contacts on Zn3P2
journal, January 1980

  • Wyeth, N. Convers; Catalano, A.
  • Journal of Applied Physics, Vol. 51, Issue 4
  • DOI: 10.1063/1.327862

Surface chemistry of Zn3P3 single crystals studied by XPS
journal, July 1987

  • Elrod, U.; Lux-Steiner, M. Ch.; Obergfell, M.
  • Applied Physics B Photophysics and Laser Chemistry, Vol. 43, Issue 3
  • DOI: 10.1007/BF00695623

Polycrystalline Zn 3 P 2 /Indium-Tin Oxide Solar Cells
journal, October 1983

  • Suda, Toshikazu; Suzuki, Masahisa; Kurita, Shoichi
  • Japanese Journal of Applied Physics, Vol. 22, Issue Part 2, No. 10
  • DOI: 10.1143/JJAP.22.L656

Metal‐insulator semiconductor Schottky‐barrier solar cells fabricated on InP
journal, February 1981

  • Kamimura, K.; Suzuki, T.; Kunioka, A.
  • Applied Physics Letters, Vol. 38, Issue 4
  • DOI: 10.1063/1.92336

Polycrystalline Zn 3 P 2 Schottky barrier solar cells
journal, January 1981

  • Bhushan, M.; Catalano, A.
  • Applied Physics Letters, Vol. 38, Issue 1
  • DOI: 10.1063/1.92124

Native oxides on etched Zn 3 P 2 surfaces studied by x‐ray photoelectron spectroscopy
journal, June 1988

  • Kato, Yoshimine; Kurita, Shoichi
  • Applied Physics Letters, Vol. 52, Issue 25
  • DOI: 10.1063/1.99756

Zinc phosphide‐zinc oxide heterojunction solar cells
journal, July 1981

  • Nayar, P. S.; Catalano, A.
  • Applied Physics Letters, Vol. 39, Issue 1
  • DOI: 10.1063/1.92537

Properties of zinc‐phosphide junctions and interfaces
journal, April 1987

  • Casey, M. Sean; Fahrenbruch, Alan L.; Bube, Richard H.
  • Journal of Applied Physics, Vol. 61, Issue 8
  • DOI: 10.1063/1.337841

Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2
journal, September 2009

  • Kimball, Gregory M.; Müller, Astrid M.; Lewis, Nathan S.
  • Applied Physics Letters, Vol. 95, Issue 11
  • DOI: 10.1063/1.3225151

Preparation and electrical properties of heterojunctions of ZnO on Zn 3 P 2 and CdTe
journal, April 1989

  • Ginting, M.; Leslie, J. D.
  • Canadian Journal of Physics, Vol. 67, Issue 4
  • DOI: 10.1139/p89-080

Analysis of the decay of picosecond fluorescence in semiconductors
journal, April 1985

  • Feldberg, Stephen W.; Evenor, Moshe; Huppert, Danny
  • Journal of Electroanalytical Chemistry and Interfacial Electrochemistry, Vol. 185, Issue 2
  • DOI: 10.1016/0368-1874(85)80130-1

Spectral response measurements of minority‐carrier diffusion length in Zn 3 P 2
journal, March 1979

  • Wyeth, N. Convers; Catalano, A.
  • Journal of Applied Physics, Vol. 50, Issue 3
  • DOI: 10.1063/1.326122

Valence‐band electronic structure of Zn 3 P 2 as a function of annealing as studied by synchrotron radiation photoemission
journal, February 1990

  • Nelson, Art J.; Kazmerski, L. L.; Engelhardt, Mike
  • Journal of Applied Physics, Vol. 67, Issue 3
  • DOI: 10.1063/1.345695

Lattice modes of Zn3P2
journal, May 1988


Properties of zinc phosphide/zinc oxide heterojunctions
journal, February 1982

  • Nayar, P. S.
  • Journal of Applied Physics, Vol. 53, Issue 2
  • DOI: 10.1063/1.330518