Investigation of thin oxide layer removal from Si substrates using an SiO 2 atomic layer etching approach: the importance of the reactivity of the substrate

Metzler, Dominik; Li, Chen; Lai, C. Steven; Hudson, Eric A.; Oehrlein, Gottlieb S.

doi:10.1088/1361-6463/aa71f1

Title: Investigation of thin oxide layer removal from Si substrates using an SiO ₂ atomic layer etching approach: the importance of the reactivity of the substrate

Journal Article · Tue Jun 06 00:00:00 EDT 2017 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/aa71f1· OSTI ID:1535490

Metzler, Dominik; Li, Chen; Lai, C. Steven; Hudson, Eric A.; Oehrlein, Gottlieb S.

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Research Organization:: Univ. of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0001939

OSTI ID:: 1535490

Journal Information:: Journal of Physics. D, Applied Physics, Vol. 50, Issue 25; ISSN 0022-3727

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

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