Atomic Layer Etching at the Tipping Point: An Overview
|
journal
|
January 2015 |
Overview of atomic layer etching in the semiconductor industry
- Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2
https://doi.org/10.1116/1.4913379
|
journal
|
March 2015 |
Low-temperature in situ cleaning of silicon (100) surface by electron cyclotron resonance hydrogen plasma
|
journal
|
May 1995 |
Low‐temperature i n s i t u surface cleaning of oxide‐patterned wafers by Ar/H 2 plasma sputter
|
journal
|
November 1990 |
Atomic Layer Etching: An Industry Perspective
|
journal
|
January 2015 |
Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4 F 8 and Ar/CHF 3 plasma
- Metzler, Dominik; Li, Chen; Engelmann, Sebastian
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
https://doi.org/10.1116/1.4935462
|
journal
|
January 2016 |
Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices
|
journal
|
November 2013 |
Low-temperature plasma processing for Si photovoltaics
|
journal
|
April 2014 |
Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
- Petit-Etienne, Camille; Darnon, Maxime; Vallier, Laurent
-
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 5
https://doi.org/10.1116/1.3483165
|
journal
|
September 2010 |
Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
- Li, Chen; Metzler, Dominik; Lai, Chiukin Steven
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
https://doi.org/10.1116/1.4954961
|
journal
|
July 2016 |
Surface science aspects of etching reactions
|
journal
|
January 1992 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
- Schaepkens, M.; Standaert, T. E. F. M.; Rueger, N. R.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 1
https://doi.org/10.1116/1.582108
|
journal
|
January 1999 |
Free Radicals in an Inductively Coupled Etching Plasma
|
journal
|
April 1994 |
Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide
|
journal
|
October 1992 |
Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC
|
journal
|
September 2003 |
Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF 4 and CHF 3
|
journal
|
March 1994 |
A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of silicon and SiO2
|
journal
|
February 2007 |
Removal efficiency of organic contaminants on Si wafer by dry cleaning using UV/O3 and ECR plasma
|
journal
|
February 2003 |
Structural and electrical characterization of HBr/O 2 plasma damage to Si substrate
- Fukasawa, Masanaga; Nakakubo, Yoshinori; Matsuda, Asahiko
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 4
https://doi.org/10.1116/1.3596606
|
journal
|
July 2011 |
Plasma-surface interactions of model polymers for advanced photoresists using C[sub 4]F[sub 8]∕Ar discharges and energetic ion beams
- Engelmann, S.; Bruce, R. L.; Kwon, T.
-
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 4
https://doi.org/10.1116/1.2759935
|
journal
|
January 2007 |
Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
- Gray, David C.; Sawin, Herbert H.; Butterbaugh, Jeffrey W.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3
https://doi.org/10.1116/1.577361
|
journal
|
May 1991 |
Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric
- Li, Chen; Gupta, Rahul; Pallem, Venkateswara
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 3
https://doi.org/10.1116/1.4944609
|
journal
|
May 2016 |
Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
- Kawakami, Masatoshi; Metzler, Dominik; Li, Chen
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
https://doi.org/10.1116/1.4949260
|
journal
|
May 2016 |
Synchrotron radiation-induced surface-conductivity of SiO2 for modification of plasma charging
|
journal
|
April 2000 |
Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy
|
journal
|
March 2013 |
Fluorocarbon assisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma
- Metzler, Dominik; Bruce, Robert L.; Engelmann, Sebastian
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
https://doi.org/10.1116/1.4843575
|
journal
|
March 2014 |
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
- Standaert, T. E. F. M.; Hedlund, C.; Joseph, E. A.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 1
https://doi.org/10.1116/1.1626642
|
journal
|
January 2004 |
On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists
- Bruce, R. L.; Weilnboeck, F.; Lin, T.
-
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 4
https://doi.org/10.1116/1.3607604
|
journal
|
July 2011 |
Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
- Rueger, N. R.; Beulens, J. J.; Schaepkens, M.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 4
https://doi.org/10.1116/1.580655
|
journal
|
July 1997 |
Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
|
journal
|
September 2016 |
Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality
|
journal
|
October 1987 |
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
- Rueger, N. R.; Doemling, M. F.; Schaepkens, M.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 5
https://doi.org/10.1116/1.581987
|
journal
|
September 1999 |
Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage
|
journal
|
September 1985 |
Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
- Weilnboeck, F.; Bruce, R. L.; Engelmann, S.
-
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 5
https://doi.org/10.1116/1.3484249
|
journal
|
September 2010 |
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
- Standaert, T. E. F. M.; Matsuo, P. J.; Allen, S. D.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 3
https://doi.org/10.1116/1.581643
|
journal
|
May 1999 |
Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques
- Thomas, R. E.; Mantini, M. J.; Rudder, R. A.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4
https://doi.org/10.1116/1.577678
|
journal
|
July 1992 |
Fluorination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas
|
journal
|
March 1989 |
Quantitative and comparative characterizations of plasma process-induced damage in advanced metal-oxide-semiconductor devices
|
journal
|
January 2008 |
Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance
|
journal
|
November 2013 |
High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
- Standaert, T. E. F. M.; Schaepkens, M.; Rueger, N. R.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 1
https://doi.org/10.1116/1.580978
|
journal
|
January 1998 |
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
|
journal
|
September 2011 |
Plasma etching: Yesterday, today, and tomorrow
|
journal
|
September 2013 |