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Title: Etch and Surface Passivation Study of AlSb Diodes Grown on GaSb Substrates.

Conference ·
OSTI ID:1640991

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1640991
Report Number(s):
SAND2019-7294C; 676850
Resource Relation:
Conference: Proposed for presentation at the 61st Electronic Materials Conference held June 26-28, 2019 in Ann Arbor, MI.
Country of Publication:
United States
Language:
English