Chemical passivation of InSb (100) substrates in aqueous solutions of sodium sulfide

Journal Article · Wed May 15 00:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S106378261305014X· OSTI ID:22126565

Dunaevskii, M. S.; Lebedev, M. V. ^[1]; Shakhmin, A. L. ^[2]; Sedova, I. V.; Ivanov, S. V. ^[1]

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1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
2. St. Petersburg State Polytechnical University (Russian Federation)

The elemental composition and electronic structure of both native-oxide-covered InSb (100) substrates and substrates treated in aqueous solutions of sodium sulfide are analyzed by X-ray photoelectron spectroscopy. It is found that, as a result of treatment in a 1 M aqueous solution of Na{sub 2}S and subsequent annealing in vacuum at 150 Degree-Sign C, the surface layer consisting of complex antimony and indium oxides of nonstoichiometric composition is removed completely with the formation of a continuous layer of chemisorbed sulfur atoms coherently bound to indium atoms. According to atomic-force microscopy data, no etching of the host substrate material occurs during sulfide passivation. A shift (by 0.37 eV) of the In-Sb bulk photoemission towards higher binding energies is found, which indicates that the surface Fermi level shifts deeper into the conduction band.

• OSTI ID: 22126565
• Journal Information: Semiconductors, Vol. 47, Issue 5; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ANTIMONY OXIDES
AQUEOUS SOLUTIONS
ATOMIC FORCE MICROSCOPY
BINDING ENERGY
CHEMISORPTION
ELECTRONIC STRUCTURE
ETCHING
FERMI LEVEL
INDIUM ANTIMONIDES
INDIUM OXIDES
LAYERS
PASSIVATION
PHOTOEMISSION
SODIUM SULFIDES
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
X-RAY PHOTOELECTRON SPECTROSCOPY