Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

doi:10.1103/PhysRevB.86.041201

Title: Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs_1–xN_x alloys: The appearance of a mobility edge

Abstract

Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋_xN_x as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

Authors:: Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

Publication Date:: Mon Jul 09 00:00:00 EDT 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102864

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 86 Journal Issue: 4; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Alberi, K., Fluegel, B., Beaton, D. A., Ptak, A. J., and Mascarenhas, A. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.86.041201.

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                    Alberi, K., Fluegel, B., Beaton, D. A., Ptak, A. J., & Mascarenhas, A. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge.  United States.  https://doi.org/10.1103/PhysRevB.86.041201

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                    Alberi, K., Fluegel, B., Beaton, D. A., Ptak, A. J., and Mascarenhas, A. Mon .  
"Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge".  United States.  https://doi.org/10.1103/PhysRevB.86.041201.

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@article{osti_1102864,

  title        = {Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge},

  author       = {Alberi, K. and Fluegel, B. and Beaton, D. A. and Ptak, A. J. and Mascarenhas, A.},

  abstractNote = {Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.},

  doi          = {10.1103/PhysRevB.86.041201},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 4,

  volume       = 86,

  place        = {United States},

  year         = {Mon Jul 09 00:00:00 EDT 2012},

  month        = {Mon Jul 09 00:00:00 EDT 2012}

}

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Works referenced in this record:

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Title: Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

Abstract

Citation Formats

Localization, Interactions, and the Metal-Insulator Transition journal, January 1984

Band Anticrossing in GaInNAs Alloys journal, February 1999

Effects of heavy nitrogen doping in III–V semiconductors– How well does the conventional wisdom holdfor the dilute nitrogen“III–V-N alloys”? journal, November 2003

Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures journal, May 2003

Excitons bound to nitrogen pairs in GaAs journal, October 1990

Impurity perturbation to the host band structure and recoil of the impurity state journal, August 2003

Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys journal, November 2004

Third-derivative modulation spectroscopy with low-field electroreflectance journal, June 1973

Alloy states in dilute GaAs1−xNx alloys (x<1%) journal, March 2003

Early manifestation of localization effects in diluted Ga(AsN) journal, June 2003

Evidence for large configuration-induced band-gap fluctuations in GaAs 1 − x N x alloys journal, July 2004

Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure journal, April 2007

Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition journal, March 2001

Impact of N-induced potential fluctuations on the electron transport in Ga(As,N) journal, December 2005

Evolution of electronic states in GaAs 1 − x N x probed by resonant Raman spectroscopy journal, December 2003

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1 − x N x with x < 0.03 journal, April 1999

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy journal, June 2000

Enhanced weak Anderson localization phenomena in the magnetoresistance of n -type (Ga,In)(N,As) journal, February 2004

Review Lecture: Metal-Insulator Transitions journal, July 1982

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs 1 − x N x journal, February 2001

Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells journal, September 2003

A comparison of MBE- and MOCVD-grown GaInNAs journal, April 2003

Intensity of Optical Absorption by Excitons journal, December 1957

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs journal, November 2010

Origin of the nitrogen-induced optical transitions in GaAs 1 − x N x journal, August 2003

Electron localization in disordered systems (the Anderson transition) journal, September 1978

Scaling of band-gap reduction in heavily nitrogen doped GaAs journal, April 2001

Title: Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs_1–xN_x alloys: The appearance of a mobility edge

Localization, Interactions, and the Metal-Insulator Transition
journal, January 1984

Band Anticrossing in GaInNAs Alloys
journal, February 1999

Effects of heavy nitrogen doping in III–V semiconductors– How well does the conventional wisdom holdfor the dilute nitrogen“III–V-N alloys”?
journal, November 2003

Role of nitrogen in the mobility drop of electrons in modulation-doped GaAsN/AlGaAs heterostructures
journal, May 2003

Excitons bound to nitrogen pairs in GaAs
journal, October 1990

Impurity perturbation to the host band structure and recoil of the impurity state
journal, August 2003

Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
journal, November 2004

Third-derivative modulation spectroscopy with low-field electroreflectance
journal, June 1973

Alloy states in dilute GaAs1−xNx alloys (x<1%)
journal, March 2003

Early manifestation of localization effects in diluted Ga(AsN)
journal, June 2003

Evidence for large configuration-induced band-gap fluctuations in ${GaAs}_{1 - x} N_{x}$ alloys
journal, July 2004

Electron Mass in Dilute Nitrides and its Anomalous Dependence on Hydrostatic Pressure
journal, April 2007

Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition
journal, March 2001

Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)
journal, December 2005

Evolution of electronic states in ${GaAs}_{1 - x} N_{x}$ probed by resonant Raman spectroscopy
journal, December 2003

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in ${GaAs}_{1 - x} N_{x}$ with $x < 0.03$
journal, April 1999

From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
journal, June 2000

Enhanced weak Anderson localization phenomena in the magnetoresistance of n -type (Ga,In)(N,As)
journal, February 2004

Review Lecture: Metal-Insulator Transitions
journal, July 1982

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped ${GaAs}_{1 - x} N_{x}$
journal, February 2001

Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells
journal, September 2003

A comparison of MBE- and MOCVD-grown GaInNAs
journal, April 2003

Intensity of Optical Absorption by Excitons
journal, December 1957

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
journal, November 2010

Origin of the nitrogen-induced optical transitions in ${GaAs}_{1 - x} N_{x}$
journal, August 2003

Electron localization in disordered systems (the Anderson transition)
journal, September 1978

Scaling of band-gap reduction in heavily nitrogen doped GaAs
journal, April 2001