Spectrally resolved localized states in GaAs1–xBix

Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A.; Fluegel, Brian; Mascarenhas, Angelo

doi:10.7567/JJAP.56.035801

Title: Spectrally resolved localized states in GaAs_1–_xBi_x

Abstract

In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs_1-xBi_x. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs_1-xBi_x. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs_1-xBi_x alloys.

Authors:

Christian, Theresa M. ^[1]; Alberi, Kirstin ^[2]; Beaton, Daniel A. ^[2]; Fluegel, Brian ^[2]; Mascarenhas, Angelo ^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Wed Feb 01 00:00:00 EST 2017

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1348153

Report Number(s):: NREL/JA-5K00-67626
Journal ID: ISSN 0021-4922

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Japanese Journal of Applied Physics

Additional Journal Information:: Journal Volume: 56; Journal Issue: 3; Journal ID: ISSN 0021-4922

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; localized states; band structure

Citation Formats


                    Christian, Theresa M., Alberi, Kirstin, Beaton, Daniel A., Fluegel, Brian, and Mascarenhas, Angelo. Spectrally resolved localized states in GaAs1–xBix.  United States: N. p., 2017. 
Web.  doi:10.7567/JJAP.56.035801.

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                    Christian, Theresa M., Alberi, Kirstin, Beaton, Daniel A., Fluegel, Brian, & Mascarenhas, Angelo. Spectrally resolved localized states in GaAs1–xBix.  United States.  https://doi.org/10.7567/JJAP.56.035801

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                    Christian, Theresa M., Alberi, Kirstin, Beaton, Daniel A., Fluegel, Brian, and Mascarenhas, Angelo. Wed .  
"Spectrally resolved localized states in GaAs1–xBix".  United States.  https://doi.org/10.7567/JJAP.56.035801.  https://www.osti.gov/servlets/purl/1348153.

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@article{osti_1348153,

  title        = {Spectrally resolved localized states in GaAs1–xBix},

  author       = {Christian, Theresa M. and Alberi, Kirstin and Beaton, Daniel A. and Fluegel, Brian and Mascarenhas, Angelo},

  abstractNote = {In this study, the role of localized states and their influence on the broader band structure remains a crucial question in understanding the band structure evolution in GaAs1-xBix. Here in this work, we present clear spectroscopic observations of recombination at several localized states in GaAs1-xBix. Sharp and recognizable photoluminescence features appear in multiple samples and redshift as a function of GaBi fraction between x = 0.16% and 0.4% at a linearized rate of 34 meV per % Bi, weaker than the redshift associated with band-to-band recombination. Interpreting these results in terms of radiative recombination between localized holes and free electrons sheds light on the relative movement of the conduction band minimum and the characteristics of localized bismuth-related trap states in GaAs1-xBix alloys.},

  doi          = {10.7567/JJAP.56.035801},

  journal      = {Japanese Journal of Applied Physics},

  number       = 3,

  volume       = 56,

  place        = {United States},

  year         = {Wed Feb 01 00:00:00 EST 2017},

  month        = {Wed Feb 01 00:00:00 EST 2017}

}

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Works referencing / citing this record:

Molecular beam epitaxy growth and optical properties of InAsSbBi
journal, August 2019

Schaefer, S. T.; Kosireddy, R. R.; Webster, P. T.
Journal of Applied Physics, Vol. 126, Issue 8
DOI: 10.1063/1.5098809

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Similar Records

Title: Spectrally resolved localized states in GaAs1–xBix

Abstract

Citation Formats

Band gap of GaAs1−xBix, 0<x<3.6% journal, June 2003

Giant Spin-Orbit Bowing in GaAs 1 − x Bi x journal, August 2006

Similar and dissimilar aspects of III − V semiconductors containing Bi versus N journal, April 2005

Direct observation of the E − resonant state in GaA s 1 − x B i x journal, December 2015

Dilute nitride based III–V alloys for laser and solar cell applications journal, August 2001

light emitting diodes journal, March 2009

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser journal, June 2013

Electrically pumped room-temperature operation of GaAs 1− x Bi x laser diodes with low-temperature dependence of oscillation wavelength journal, July 2014

Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors journal, January 2013

The effect of Bi composition to the optical quality of GaAs 1−x Bi x journal, July 2011

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix journal, June 2008

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs 1 − x Bi x journal, February 2011

Bi isoelectronic impurities in GaAs journal, February 2008

Nitrogen pair luminescence in GaAs journal, April 1990

Optical Spectroscopy of Single Impurity Centers in Semiconductors journal, August 2004

Insight into the epitaxial growth of high optical quality GaAs 1–x Bi x journal, December 2015

Overcoming limitations in semiconductor alloy design journal, June 2001

Isoelectronic Donors and Acceptors journal, August 1966

Valence band anticrossing in GaBixAs1−x journal, July 2007

Experimental and theoretical studies of band gap alignment in GaAs 1−x Bi x /GaAs quantum wells journal, December 2014

Theory of electronic structure evolution in GaAsN and GaPN alloys journal, August 2001

Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs 1 − x N x journal, February 2001

Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band journal, August 2000

Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs 1 − x N x alloys: The appearance of a mobility edge journal, July 2012

Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N journal, April 2013

Molecular beam epitaxy growth and optical properties of InAsSbBi journal, August 2019

Title: Spectrally resolved localized states in GaAs_1–_xBi_x

Band gap of GaAs1−xBix, 0<x<3.6%
journal, June 2003

Giant Spin-Orbit Bowing in ${GaAs}_{1 - x} {Bi}_{x}$
journal, August 2006

Similar and dissimilar aspects of $III − V$ semiconductors containing $Bi$ versus $N$
journal, April 2005

Direct observation of the $E_{-}$ resonant state in $GaA s_{1 − x} B i_{x}$
journal, December 2015

Dilute nitride based III–V alloys for laser and solar cell applications
journal, August 2001

light emitting diodes
journal, March 2009

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser
journal, June 2013

Electrically pumped room-temperature operation of GaAs ₁₋ _x Bi _x laser diodes with low-temperature dependence of oscillation wavelength
journal, July 2014

Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors
journal, January 2013

The effect of Bi composition to the optical quality of GaAs _1−x Bi _x
journal, July 2011

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
journal, June 2008

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs $_{1 - x}$ Bi $_{x}$
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Bi isoelectronic impurities in GaAs
journal, February 2008

Nitrogen pair luminescence in GaAs
journal, April 1990

Optical Spectroscopy of Single Impurity Centers in Semiconductors
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Insight into the epitaxial growth of high optical quality GaAs _1–x Bi _x
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Overcoming limitations in semiconductor alloy design
journal, June 2001

Isoelectronic Donors and Acceptors
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Experimental and theoretical studies of band gap alignment in GaAs _1−x Bi _x /GaAs quantum wells
journal, December 2014

Theory of electronic structure evolution in GaAsN and GaPN alloys
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Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped ${GaAs}_{1 - x} N_{x}$
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