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Title: Evolution of superclusters and delocalized states in GaAs 1–xN x

Abstract

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs 1–xN x was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101811
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 86 Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.205203.
Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., & Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx. United States. doi:10.1103/PhysRevB.86.205203.
Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Wed . "Evolution of superclusters and delocalized states in GaAs1–xNx". United States. doi:10.1103/PhysRevB.86.205203.
@article{osti_1101811,
title = {Evolution of superclusters and delocalized states in GaAs1–xNx},
author = {Fluegel, B. and Alberi, K. and Beaton, D. A. and Crooker, S. A. and Ptak, A. J. and Mascarenhas, A.},
abstractNote = {The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.},
doi = {10.1103/PhysRevB.86.205203},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 20,
volume = 86,
place = {United States},
year = {2012},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.86.205203

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Cited by: 10 works
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