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Title: Evolution of superclusters and delocalized states in GaAs1–xNx

Abstract

The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101811
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 86 Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.205203.
Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., & Mascarenhas, A. Evolution of superclusters and delocalized states in GaAs1–xNx. United States. doi:10.1103/PhysRevB.86.205203.
Fluegel, B., Alberi, K., Beaton, D. A., Crooker, S. A., Ptak, A. J., and Mascarenhas, A. Wed . "Evolution of superclusters and delocalized states in GaAs1–xNx". United States. doi:10.1103/PhysRevB.86.205203.
@article{osti_1101811,
title = {Evolution of superclusters and delocalized states in GaAs1–xNx},
author = {Fluegel, B. and Alberi, K. and Beaton, D. A. and Crooker, S. A. and Ptak, A. J. and Mascarenhas, A.},
abstractNote = {The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster is fully developed by 0.32% N.},
doi = {10.1103/PhysRevB.86.205203},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 20,
volume = 86,
place = {United States},
year = {2012},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.86.205203

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Cited by: 10 works
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Works referenced in this record:

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1 x N x with x < 0.03
journal, April 1999


From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
journal, June 2000

  • Klar, P. J.; Grüning, H.; Heimbrodt, W.
  • Applied Physics Letters, Vol. 76, Issue 23
  • DOI: 10.1063/1.126671

Luminescence spectra and kinetics of disordered solid solutions
journal, May 1999


Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors
conference, January 2011

  • Mori, N.; Hiejima, K.; Kubo, H.
  • PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings
  • DOI: 10.1063/1.3666239

Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
journal, September 1999


A comparison of MBE- and MOCVD-grown GaInNAs
journal, April 2003


Intensity of Optical Absorption by Excitons
journal, December 1957


Alloy states in dilute GaAs1−xNx alloys (x<1%)
journal, March 2003

  • Luo, X. D.; Huang, J. S.; Xu, Z. Y.
  • Applied Physics Letters, Vol. 82, Issue 11
  • DOI: 10.1063/1.1560872

Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
journal, July 1992

  • Weyers, Markus; Sato, Michio; Ando, Hiroaki
  • Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 7A
  • DOI: 10.1143/JJAP.31.L853

Early manifestation of localization effects in diluted Ga(AsN)
journal, June 2003

  • Masia, F.; Polimeni, A.; Baldassarri Höger von Högersthal, G.
  • Applied Physics Letters, Vol. 82, Issue 25
  • DOI: 10.1063/1.1586787

Origin of the nitrogen-induced optical transitions in GaAs 1 x N x
journal, August 2003


Evidence for large configuration-induced band-gap fluctuations in GaAs 1 x N x alloys
journal, July 2004


Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence
journal, June 2003

  • Wang, Y. J.; Wei, X.; Zhang, Y.
  • Applied Physics Letters, Vol. 82, Issue 25
  • DOI: 10.1063/1.1584789

Electron localization in disordered systems (the Anderson transition)
journal, September 1978